VND5N07 STMicroelectronics, VND5N07 Datasheet - Page 8

• Manufacturer Part Number: VND5N07
• Description: MOSFET N-CH 70V 5A DPAK
• Manufacturer: STMicroelectronics
• Series: OMNIFET II™r
• Type: Low Sider

Specifications of VND5N07

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 200 mOhm
• Current - Peak Output: 5A
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Forward Transconductance Gfs (max / Min): 4 S
• Drain-source Breakdown Voltage: 70 V
• Continuous Drain Current: 5 A
• Power Dissipation: 60000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Operating Temperature: -
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-2481-5; 497-3302-5; 497-3302-5; VND5N07-E

Electrical specifications
8/24
Table 7.
1. Parameters guaranteed by design / characterization.
Table 8.
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%.
2. Parameters guaranteed by design / characterization.
Table 9.
1. Parameters guaranteed by design / characterization.
Symbol
Symbol
Symbol
(dI/dt)
I
t
T
V
E
Q
RRM
dlim
T
t
t
t
t
I
t
jsh
d(on)
d(off)
d(on)
d(off)
SD
as
I
gf
rr
jrs
Q
rr
lim
t
t
t
t
(2)
r
r
(1)
f
f
(1)
i
(2)
(1)
(1)
(1)
(1)
(2)
on
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on current slope
Total input charge
Forward On voltage
Reverse recovery time
Reverse recovery
charge
Reverse recovery
current
Drain current limit
Step response current
limit
Overtemperature
shutdown
Overtemperature reset
Fault sink current
Single pulse
avalanche energy
Switching
Source Drain diode
Protections (-40°C < T
Parameter
Parameter
Parameter
(1)
V
V
V
V
V
V
V
I
I
V
V
V
V
V
V
V
Starting T
V
SD
SD
DD
gen
DD
gen
DD
in
DD
DD
IN
IN
IN
IN
IN
IN
IN
= 10V; R
= 2.5A; V
= 2.5A; dI/dt = 100 A/µs
= 10V; V
= 5V; V
= 10V;
= 5V
= 10V; V
= 5V; V
= 10V R
j
= 15V; I
= 15V; I
= 15V; I
= 12V; I
= 30V;
= 10V; R
= 10V; R
< 150°C, unless otherwise specified)
Test conditions
Test conditions
Test conditions
j
= 25°C; V
DS
DS
gen
gen
D
D
D
D
DS
DS
IN
gen
gen
= 2.5A
= 2.5A
= 2.5A
= 2.5A; V
= 13V
= 13V
= 0V
= 10Ω
= 13V
= 13V;
= 1kΩ; L = 10mH
= 10Ω
= 1kΩ
DD
IN
= 20V
= 10V
Min.
Min.
Min.
150
135
3.5
3.5
0.2
3900
1100
Typ.
Typ.
Typ.
150
150
400
150
0.3
5.7
50
60
40
80
18
15
40
50
20
5
5
5000
1600
Max.
Max.
Max.
100
100
300
250
600
1.6
80
20
60
7
7
VND5N07
A/µS
Unit
Unit
Unit
mA
mA
nC
µC
µS
µS
ns
ns
ns
ns
ns
ns
ns
ns
ns
°C
°C
V
A
A
A
J