R1LP0408CSB-5SI#S0 Renesas Electronics America, R1LP0408CSB-5SI#S0 Datasheet - Page 9
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R1LP0408CSB-5SI#S0
Manufacturer Part Number
R1LP0408CSB-5SI#S0
Description
IC SRAM 4MBIT 55NS 32TSOP
Manufacturer
Renesas Electronics America
Datasheet
1.R1LP0408CSB-5SIA0.pdf
(16 pages)
Specifications of R1LP0408CSB-5SI#S0
Format - Memory
RAM
Memory Type
SRAM
Memory Size
4M (512K x 8)
Speed
55ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
32-TSOP II
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
R1LP0408CSB5SI#S0
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
R1LP0408C-I Series
AC Characteristics
(Ta = −40 to +85°C, V
Test Conditions
• Input pulse levels: V
• Input rise and fall time: 5 ns
• Input and output timing reference levels: 1.5 V
• Output load: 1 TTL Gate + C
Read Cycle
Parameter
Read cycle time
Address access time
Chip select access time
Output enable to output valid
Chip select to output in low-Z
Output enable to output in low-Z
Chip deselect to output in high-Z
Output disable to output in high-Z
Output hold from address change
Rev.2.00, May.26.2004, page 7 of 12
1 TTL Gate + C
(Including scope and jig)
CC
IL
= 5 V ± 10%, unless otherwise noted.)
= 0.4 V, V
L
L
(50 pF) (R1LP0408C-5SI)
(100 pF) (R1LP0408C-7LI)
IH
Symbol
t
t
t
t
t
t
t
t
t
= 2.4 V
RC
AA
CO
OE
LZ
OLZ
HZ
OHZ
OH
R1LP0408C-I
-5SI
Min
55
10
5
0
0
10
Max
55
55
25
20
20
70
10
5
10
-7LI
Min
0
0
Max
70
70
35
25
25
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
2
2
1, 2
1, 2