LH28F160S5T-L70A Sharp Microelectronics, LH28F160S5T-L70A Datasheet - Page 44

• Manufacturer Part Number: LH28F160S5T-L70A
• Description: IC FLASH 16MBIT 70NS 56TSOP
• Manufacturer: Sharp Microelectronics

Specifications of LH28F160S5T-L70A

• Rohs Status: RoHS non-compliant
• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 16M (2M x 8 or 1M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 4.75 V ~ 5.25 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 56-TSOP
• Other names: 425-1840; LHF16KA9

sharp
6.2.6 ALTERNATIVE CE#-CONTROLLED WRITES
NOTES:
1. In systems where CE# defines the write pulse width (within a longer WE# timing waveform), all setup, hold and
2. Sampled, not 100% tested.
3. Refer to Table 4 for valid A
4. V
5. See Ordering Information for device speeds (valid operational combinations).
6. BYTE# should be in stable until determination of block erase, full chip erase, (multi) word/byte write, block lock-
7. See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (High Seed
8. See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (Standard
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
PHEL
WLEL
ELEH
SHEH
VPEH
AVEH
DVEH
EHDX
EHAX
EHWH
EHEL
EHRL
EHGL
QVVL
QVSL
FVEH
EHFV
Sym.
inactive WE# times should be measured relative to the CE# waveform.
configuration.
lock-bit configuration success (SR.1/3/4/5=0).
bit configuration or STS configuration success (SR.7=1).
Configuration) for testing characteristics.
Configuration) for testing characteristics.
PP
should be held at V
Write Cycle Time
RP# High Recovery to CE# Going Low
WE# Setup to CE# Going Low
CE# Pulse Width
WP# V
V
Address Setup to CE# Going High
Data Setup to CE# Going High
Data Hold from CE# High
Address Hold from CE# High
WE# Hold from CE# High
CE# Pulse Width High
CE# High to STS Going Low
Write Recovery before Read
V
WP# V
High Z
BYTE# Setup to CE# Going High
BYTE# Hold from CE# High
PP
PP
Setup to CE# Going High
Hold from Valid SRD, STS High Z
Versions
IH
IH
Setup to CE# Going High
Hold from Valid SRD, STS
Parameter
(5)
PPH1
IN
until determination of block erase, full chip erase, (multi) word/byte write or block
and D
V
CC
IN
=5V±0.5V, 5V±0.25V, T
for block erase, full chip erase, (multi) word/byte write or block lock-bit
V
V
CC
CC
=5V±0.25V LH28F160S5-L70
=5V±0.5V
LHF16KA9
Notes
2,4
2,4
2
2
2
3
3
NOTE 6
(1)
Min.
A
100
100
70
50
40
40
25
50
=0°C to +70°C
1
0
5
5
0
0
0
0
Max.
90
(7)
LH28F160S5-L80
NOTE 6
Min.
100
100
80
50
40
40
25
50
1
0
5
5
0
0
0
0
Max.
90
(8)
Rev. 2.0
Unit
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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