MT46V8M16P-75:D TR Micron Technology Inc, MT46V8M16P-75:D TR Datasheet - Page 69
![IC DDR SDRAM 128MBIT 66TSOP](/photos/7/22/72288/mfg557-66-tsop_sml.jpg)
MT46V8M16P-75:D TR
Manufacturer Part Number
MT46V8M16P-75:D TR
Description
IC DDR SDRAM 128MBIT 66TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT46V16M8TG-6T_LD_TR.pdf
(81 pages)
Specifications of MT46V8M16P-75:D TR
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
128M (8Mx16)
Speed
7.5ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1211-2
MT46V8M16P-75:D TR
MT46V8M16P-75:D TR
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Figure 42:
PDF: 09005aef816fd013/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 128Mb DDR: Rev. F; Core DDR: Rev. A 4/07 EN
COMMAND
ADDRESS
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
WRITE-to-READ – Odd Number of Data, Interrupting
Notes:
Bank a,
WRITE
Col b
T0
t
t
t
DQSS
DQSS
DQSS
1. DI b = data-in for column b; DO n = data-out for column n.
2. An interrupted burst of 4 is shown; one data element is written.
3.
4. A10 is LOW with the WRITE command (auto precharge is disabled).
5. DQS is required at T1n, T2, and T2n (nominal case) to register DM.
6. If the burst of 8 is used, DM and DQS are required at T3–T3n because the READ command
t
the last two data elements).
will not mask these data elements.
WTR is referenced from the first positive CK edge after the last desired data-in pair (not
DI
b
NOP
T1
DI
b
DI
b
T1n
NOP
T2
t
WTR
T2n
69
Bank a,
READ
Col n
T3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T3n
128Mb: x4, x8, x16 DDR SDRAM
CL = 2
CL = 2
CL = 2
T4
NOP
DON’T CARE
T5
©2004 Micron Technology, Inc. All rights reserved.
NOP
DO
DO
DO
n
n
n
TRANSITIONING DATA
T5n
Operations
T6
NOP
T6n
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