MT47H32M16BN-25:D TR Micron Technology Inc, MT47H32M16BN-25:D TR Datasheet - Page 23
![IC DDR2 SDRAM 512MBIT 84FBGA](/photos/7/23/72318/mfg557-84-fbga_sml.jpg)
MT47H32M16BN-25:D TR
Manufacturer Part Number
MT47H32M16BN-25:D TR
Description
IC DDR2 SDRAM 512MBIT 84FBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT47H128M4BT-37EA_TR.pdf
(129 pages)
Specifications of MT47H32M16BN-25:D TR
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
512M (32Mx16)
Speed
2.5ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
84-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Electrical Specifications – I
I
Table 8: General I
I
Table 9: I
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. O 7/09 EN
I
CL (I
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Speed Grade
Timing patterns for 4-bank x4/x8/x16 devices
-5E
-37E
-3
-3E
-25
-25E
-187E
DD
DD7
DD
RCD (I
RC (I
RRD (I
RRD (I
CK (I
RAS MIN (I
RAS MAX (I
RP (I
RFC (I
RFC (I
RFC (I
RFC (I
FAW (I
FAW (I
Parameters
DD
Specifications and Conditions
DD
DD
DD
Conditions
DD
DD
DD
DD
)
DD
DD
DD
DD
DD
)
)
)
)
) - x4/x8 (1KB)
) - x16 (2KB)
- 256Mb)
- 512Mb)
- 1Gb)
- 2Gb)
) - x4/x8 (1KB)
) - x16 (2KB)
DD7
DD
DD
)
)
Timing Patterns (4-Bank Interleave READ Operation)
I
A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D D
A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D D D
A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D
A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D
A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D D D D D
A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D D D D
A0 RA0 D D D D A1 RA1 D D D D A2 RA2 D D D D A3 RA3 D D D D D D D D D D D
DD7
DD
Notes:
Parameters
Timing Patterns
The detailed timings are shown below for I
conflict with pattern requirements of Table 9, then Table 9 requirements take precedence.
1. A = active; RA = read auto precharge; D = deselect.
2. All banks are being interleaved at
3. Control and address bus inputs are stable during DESELECTs.
70,000
127.5
-25E
12.5
57.5
12.5
105
195
7.5
2.5
10
45
75
5
DD
Parameters
70,000
127.5
105
195
-25
7.5
2.5
15
60
10
45
15
75
6
23
Defined by pattern in Table 9
Defined by pattern in Table 9
Electrical Specifications – I
70,000
127.5
105
195
-3E
7.5
12
57
10
45
12
75
t
4
3
RC (I
Micron Technology, Inc. reserves the right to change products or specifications without notice.
DD
DD7
512Mb: x4, x8, x16 DDR2 SDRAM
) without violating
. Where general I
70,000
127.5
105
195
7.5
15
60
10
45
15
75
-3
5
3
70,000
127.5
-37E
3.75
105
195
7.5
15
60
10
45
15
75
4
©2004 Micron Technology, Inc. All rights reserved.
t
DD
RRD (I
parameters in Table 8
DD
DD
70,000
127.5
105
195
-5E
7.5
) using a BL = 4.
15
55
10
40
15
75
3
5
Parameters
Units
t
CK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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