MT46V32M4P-6T:D Micron Technology Inc, MT46V32M4P-6T:D Datasheet - Page 25
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MT46V32M4P-6T:D
Manufacturer Part Number
MT46V32M4P-6T:D
Description
IC DDR SDRAM 128MBIT 6NS 66TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT46V16M8TG-6T_LD_TR.pdf
(81 pages)
Specifications of MT46V32M4P-6T:D
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
128M (32Mx4)
Speed
6ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 20:
Table 21:
Table 22:
PDF: 09005aef816fd013/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 128Mb DDR: Rev. F; Core DDR: Rev. A 4/07 EN
AC Characteristics
Parameter
Speed
Speed
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
Terminating voltage delay to V
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE-to-READ command delay
Exit SELF REFRESH-to-non-READ command
Exit SELF REFRESH-to-READ command
Data valid output window (DVW)
-75/-75Z/-75E
-75/-75Z/-75E
-75/-75Z/-75E
-75/-75Z/-75E
-75/-75Z/-75E
-75/-75Z/-75E
Electrical Characteristics and Recommended AC Operating Conditions (-75Z, -75)
(continued)
Notes: 1–6, 15–18, 34 apply to entire table; Notes appear on pages 26–32;
Input Slew Rate Derating Values for Addresses and Commands
Note: 15 applies to entire table; 0°C ≤ T
Input Slew Rate Derating Values for DQ, DQS, and DM
Note: 32 apply to entire table; 0°C ≤ T
Slew Rate
Slew Rate
DD
0.500 V/ns
0.400 V/ns
0.300 V/ns
0.500 V/ns
0.400 V/ns
0.300 V/ns
128Mb,
256Mb,
512Mb
1Gb
A
A
≤ +70°C; V
≤ +70°C; V
1.00
1.05
1.10
0.50
0.55
0.60
t
Symbol
t
25
t
DS
t
IS
WPRES
t
t
t
t
t
t
WPRE
t
t
t
WPST
XSNR
XSNR
XSRD
RPRE
RPST
t
WTR
RRD
VTD
t
n/a
WR
RP
DD
DD
Q = +2.5V ±0.2V, V
Q = +2.5V ±0.2V, V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
0.25
200
Electrical Specifications – DC and AC
t
0.9
0.4
0.4
20
15
15
75
QH -
0
0
1
–
-75Z
t
DQSQ
128Mb: x4, x8, x16 DDR SDRAM
Max
1.1
0.6
0.6
–
–
–
–
–
–
–
–
–
–
0.50
0.55
0.60
t
t
DD
DH
IH
1
1
1
DD
= +2.5V ±0.2V
127.5
= +2.5V ±0.2V
Min
0.25
200
t
0.9
0.4
0.4
75
20
15
15
QH -
0
0
1
-75
©2004 Micron Technology, Inc. All rights reserved.
t
DQSQ
Max
1.1
0.6
0.6
–
–
–
–
–
–
–
–
–
–
Units
Units
Units
t
t
t
t
t
t
ns
CK
CK
ns
ns
CK
ns
CK
ns
CK
ns
ns
CK
ns
ns
ns
ns
ns
ns
ns
Notes
21, 22
44
44
20
26