UPD44164362AF5-E50-EQ2 Renesas Electronics America, UPD44164362AF5-E50-EQ2 Datasheet - Page 22

• Manufacturer Part Number: UPD44164362AF5-E50-EQ2
• Description: SRAM DDRII 18MBIT CIO 165-PBGA
• Manufacturer: Renesas Electronics America

Specifications of UPD44164362AF5-E50-EQ2

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II
• Memory Size: 18M (512K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Read and Write Timing
Remarks 1. Q01 refers to output from address A0.
22
Address
R, W#
CQ#
LD#
DQ
CQ
C#
K#
C
K
2. Outputs are disabled (high impedance) 2.5 clocks after the last READ (LD# = LOW, R, W# = HIGH) is
3. The second NOP cycle at the cycle “5” is not necessary for correct device operation;
Q02 refers to output from the next internal burst address following A0, etc.
input in the sequences of [READ]-[NOP].
however, at high clock frequencies it may be required to prevent bus contention.
Qx2
TKHCH
TKHKL
1
NOP
TIVKH
TAVKH
TKLKH
TKLKH
μ
TKHCH
A0
(burst of 2)
PD44164082A-A, 44164092A-A, 44164182A-A, 44164362A-A
2
TKHAX
READ
TKHKH
TCHCQX
TCHCQV
TKHIX
TCHQX1
TCHQV
A1
3
(burst of 2)
TKHK#H
READ
Data Sheet M19866EJ1V0DS
4
TCHCQX
NOP
Q01
TCHCQV
TK#HKH
TCHQX
TCHQV
Q02
5
Q11
NOP
Q12
A2
TDVKH
(burst of 2)
6
TCHQX
TKHKL TKLKH TKHKH
WRITE
TCHQZ
TKHDX
A3
D21
7
(burst of 2)
WRITE
D22
TDVKH
TKHDX
A4
D31
8
TKHK#H
(burst of 2)
READ
D32
TK#HKH
9
10
Q41
Q42
TCQHQV
TCQHQX