IDT71321SA55J IDT, Integrated Device Technology Inc, IDT71321SA55J Datasheet - Page 5

• Manufacturer Part Number: IDT71321SA55J
• Description: IC SRAM 16KBIT 55NS 52PLCC
• Manufacturer: IDT, Integrated Device Technology Inc

Specifications of IDT71321SA55J

• Format - Memory: RAM
• Memory Type: SRAM - Dual Port, Asynchronous
• Memory Size: 16K (2K x 8)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 52-PLCC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 71321SA55J

DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (V
NOTE:
1. At Vcc < 2.0V leakages are undefined.
Data Retention Characteristics
NOTES:
1. V
2. t
3. This parameter is guaranteed but not production tested.
Data Retention Waveform
I
V
t
t
CCDR
CDR
R
Symbol
IDT71321SA/LA and IDT71421SA/LA
High Speed 2K x 8 Dual-Port Static RAM with Interrupts
DR
(3)
Symbol
RC
(3)
CC
V
|I
V
V
|I
LO
= Read Cycle Time
LI
OL
OL
OH
= 2V, T
|
|
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
V
CC
A
Input Leakage Current
Output Leakage Current
Output Low Voltage (I/O
Open Drain Output
Low Voltage (BUSY/INT)
Output High Voltage
= +25°C, and is not production tested.
for Data Retention
V
CE
Parameter
CC
Parameter
(1)
(1)
0
-I/O
7
)
V
t
4.5V
IH
CDR
V
CE = V
V
I
I
I
DATA RETENTION MODE
OL
OL
OH
V
V
CC
CC
CC
IN
= 4mA
= 16mA
= -4mA
= 5.5V, V
- 5.5V
> V
= 2.0V, CE > V
IH
(LA Version Only)
CC
, V
Test Conditions
- 0.2V or VI
OUT
V
IN
DR
= 0V to V
6.42
= 0V to V
V
5
≥
DR
Test Condition
CC
2.0V
N
- 0.2V
< 0.2V
CC
CC
,
CC
= 5.0V ± 10%)
4.5V
Industrial and Commercial Temperature Ranges
t
R
V
Min.
COM'L
IND
2.4
___
___
___
___
IH
71321SA
71421SA
2691 drw 04
Max.
0.4
0.5
10
10
___
Min.
t
RC
2.0
____
____
0
(2)
,
Min.
2.4
___
___
___
___
Typ.
100
100
____
____
____
71321LA
71421LA
(1)
Max.
0.4
0.5
___
5
5
4000
Max.
1500
____
____
0
2691 tbl 05
2691 tbl 06
Unit
µA
µA
Unit
V
V
V
µA
µA
ns
ns
V