M24512-WMW6G STMicroelectronics, M24512-WMW6G Datasheet - Page 25
M24512-WMW6G
Manufacturer Part Number
M24512-WMW6G
Description
IC EEPROM 512KBIT 400KHZ 8SOIC
Manufacturer
STMicroelectronics
Datasheet
1.M24512-RDW6TP.pdf
(41 pages)
Specifications of M24512-WMW6G
Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Memory Size
512K (64K x 8)
Speed
400kHz
Interface
I²C, 2-Wire Serial
Voltage - Supply
2.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8583-5
M24512-WMW6G
M24512-WMW6G
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M24512-WMW6G
Manufacturer:
NXP
Quantity:
760
Part Number:
M24512-WMW6G
Manufacturer:
ST
Quantity:
20 000
M24512-R, M24512-W, M24512-DR
Table 11.
1. Sampled only, not 100% tested.
2. E2,E1,E0: Input impedance when the memory is selected (after a Start condition).
Table 12.
1. The new M24512-W devices (identified by the process letter K) offer I
2. Characterized value, not tested in production.
3. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
Symbol
Symbol
I
I
V
V
Z
I
I
Z
CC0
CC1
V
completion of the internal write cycle t
I
CC
C
C
LO
OL
LI
H
L
IH
IL
IN
IN
(2)
(2)
Input leakage current
(SCL, SDA, E0, E1,
E2)
Output leakage
current
Supply current (Read)
Supply current (Write)
Standby supply
current
Input low voltage
(SCL, SDA, WC)
Input high voltage
(SCL, SDA)
Input high voltage
(WC, E0, E1, E2)
Output low voltage
Input capacitance (SDA)
Input capacitance (other pins)
Input impedance
(E2, E1, E0, WC)
Input impedance
(E2, E1, E0, WC)
Input parameters
DC characteristics (voltage range W)
Parameter
Parameter
(1)
Doc ID 16459 Rev 22
V
device in Standby mode
SDA in Hi-Z, external voltage applied
on SDA: V
V
(rise/fall time < 50 ns)
V
(rise/fall time < 50 ns)
2.5 V < V
(rise/fall time < 50 ns)
During t
Device not selected
V
= 2.5 V
V
I
I
OL
OL
IN
CC
CC
IN
IN
Test conditions (see
W
= 2.1 mA, V
= 3 mA, V
= V
= V
= V
= 2.5 V, f
= 5.5 V, f
(t
W
SS
SS
SS
W
is triggered by the correct decoding of a Write instruction).
CC
, 2.5 V < V
or V
or V
or V
SS
< 5.5 V, f
c
c
or V
CC
CC
CC
CC
Test condition
Table
= 400 kHz
= 400 kHz
V
V
CC
, V
, V
= 5.5 V
IN
IN
CC
= 2.5 V or
(3)
CC
< 0.3V
> 0.7V
CC
CC
10)
c
,
= 5.5 V
= 1 MHz
< 5.5 V
Device grade 3
Device grade 6
Table 8
CC
CC
CC
and
= 1.5 mA.
Min.
500
30
DC and AC parameters
0.7V
0.7V
–0.45
Min.
CC
CC
Max.
8
6
V
0.3V
CC
Max.
1
5
± 2
± 2
2.5
6.5
0.4
2
5
2
3
(1)
(2)
+0.6
CC
Unit
k
k
pF
pF
Unit
25/41
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V