SMBJ170A-E3/55 Vishay Semiconductors, SMBJ170A-E3/55 Datasheet - Page 3

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SMBJ170A-E3/55

Manufacturer Part Number
SMBJ170A-E3/55
Description
TVS Diodes - Transient Voltage Suppressors 600W 170V 5% Uni
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of SMBJ170A-E3/55

Product Category
TVS Diodes - Transient Voltage Suppressors
Rohs
yes
Polarity
Unidirectional
Operating Voltage
170 V
Breakdown Voltage
189 V
Clamping Voltage
275 V
Peak Surge Current
100 A
Package / Case
DO-214AA
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Channels
1 Channel
Dimensions
3.94(Max) mm W x 4.57(Max) mm L
Peak Pulse Power Dissipation
600 W
Factory Pack Quantity
3200
Tradename
TRANSZORB

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SMBJ170A-E3/55
Manufacturer:
AOS
Quantity:
931
Note
(1)
Note
(1)
RATINGS AND CHARACTERISTICS CURVES (T
Revision: 10-Dec-12
THERMAL CHARACTERISTICS (T
PARAMETER
Typical thermal resistance, junction to ambient
Typical thermal resistance, junction to lead
ORDERING INFORMATION (Example)
PREFERRED P/N
SMBJ5.0A-E3/52
SMBJ5.0A-E3/5B
SMBJ5.0AHE3/52
SMBJ5.0AHE3/5B
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
AEC-Q101 qualified
Mounted on minimum recommended pad layout
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
100
100
10
0.1
75
50
25
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
0
0.1 µs
1
0
0.2 x 0.2" (5.0 x 5.0 mm)
Fig. 1 - Peak Pulse Power Rating Curve
25
Copper Pad Areas
1.0 µs
www.vishay.com
(1)
(1)
T
50
J
- Initial Temperature (°C)
t
d
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
10 µs
- Pulse Width (s)
75
UNIT WEIGHT (g)
100
0.096
0.096
0.096
0.096
100 µs
125
150
1.0 ms
175
A
PREFERRED PACKAGE CODE
(1)
= 25 °C unless otherwise noted)
10 ms
200
5B
5B
52
52
A
= 25 °C unless otherwise noted)
3
SYMBOL
R
R
6000
1000
JA
JL
150
100
100
50
10
0
0
1
SMBJ5.0A thru SMBJ188A
BASE QUANTITY
www.vishay.com/doc?91000
Vishay General Semiconductor
Fig. 4 - Typical Junction Capacitance
t
d
V
3200
3200
750
750
t
r
WM
= 10 µs
Peak Value
I
V
Voltage V
Uni-Directional
Bi-Directional
PPM
1.0
R
- Reverse Stand-Off Voltage (V)
Fig. 3 - Pulse Waveform
, Measured at Stand-Off
VALUE
t - Time (ms)
WM
Half Value -
I
100
PPM
20
10
13" diameter plastic tape and reel
13" diameter plastic tape and reel
DiodesEurope@vishay.com
7" diameter plastic tape and reel
7" diameter plastic tape and reel
2.0
10/1000 µs Waveform
as defined by R.E.A.
T
Pulse Width (t
is defined as the Point
where the Peak Current
decays to 50 % of I
J
= 25 °C
I
DELIVERY MODE
2
PP
Document Number: 88392
T
f = 1.0 MHz
V
J
sig
= 25 °C
3.0
= 50 mV
Measured at
Zero Bias
d
)
100
PPM
P-P
°C/ W
UNIT
200
4.0

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