SMBJ18-E3/51 Vishay Semiconductors, SMBJ18-E3/51 Datasheet

SMBJ18-E3/51

Manufacturer Part Number

SMBJ18-E3/51

Description

TVS Diodes - Transient Voltage Suppressors 600W 18V 10% Uni

Manufacturer

Vishay Semiconductors

Datasheet

1.SMBJ160CA2B.pdf (5 pages)

Specifications of SMBJ18-E3/51

Product Category

TVS Diodes - Transient Voltage Suppressors

Rohs

yes

Polarity

Unidirectional

Operating Voltage

18 V

Breakdown Voltage

20 V

Clamping Voltage

32.2 V

Peak Surge Current

100 A

Package / Case

DO-214AA

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Channels

1 Channel

Dimensions

3.94(Max) mm W x 4.57(Max) mm L

Peak Pulse Power Dissipation

600 W

Factory Pack Quantity

2000

Tradename

TRANSZORB

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DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional devices use CA suffix (e.g. SMBJ10CA).

Electrical characteristics apply in both directions.

Notes

(1)

(2)

Revision: 10-Dec-12

PRIMARY CHARACTERISTICS

MAXIMUM RATINGS (T

PARAMETER

Peak pulse power dissipation with a 10/1000 μs waveform

Peak pulse current with a 10/1000 μs waveform

Peak forward surge current 8.3 ms single half sine-wave uni-directional only

Operating junction and storage temperature range

Non-repetitive current pulse, per fig. 3 and derated above T

Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal

FSM

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,

(uni-directional only)

(uni-directional)

(bi-directional)

Package

Polarity

PPM

max.

www.vishay.com

DO-214AA (SMB J-Bend)

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Uni-directional, bi-directional

= 25 °C unless otherwise noted)

Transient Voltage Suppressors

DO-214AA (SMBJ)

Surface Mount T

5.0 V to 188 V

6.4 V to 231 V

150 °C

600 W

100 A

(1)

(1)(2)

= 25 °C per fig. 2.

(fig. 1)

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• 600 W peak pulse power capability with a

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak of

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, and telecommunication.

MECHANICAL DATA

Case: DO-214AA (SMBJ)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: For uni-directional types the band denotes

cathode end, no marking on bi-directional types

RANS

10/1000 μs waveform, repetitive rate (duty

cycle): 0.01 %

260 °C

please see

(2)

SMBJ5.0A thru SMBJ188A

SYMBOL

www.vishay.com/doc?91000

Vishay General Semiconductor

ORB

www.vishay.com/doc?99912

, T

PPM

FSM

PPM

STG

See next table

- 55 to + 150

DiodesEurope@vishay.com

VALUE

600

100

Document Number: 88392

UNIT

°C

Related parts for SMBJ18-E3/51

SMBJ18-E3/51 Summary of contents

Page 1

... Mounted on 0.2" x 0.2" (5 5.0 mm) copper pads to each terminal Revision: 10-Dec-12 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT SMBJ5.0A thru SMBJ188A Vishay General Semiconductor Z RANS ORB FEATURES • ...

Page 2

... E136766 for both uni-directional and bi-directional devices Revision: 10-Dec-12 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT SMBJ5.0A thru SMBJ188A Vishay General Semiconductor = 25 °C unless otherwise noted) A TEST ...

Page 3

... Fig Pulse Power or Current vs. Initial Junction Temperature Revision: 10-Dec-12 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT SMBJ5.0A thru SMBJ188A Vishay General Semiconductor = 25 °C unless otherwise noted) A SYMBOL ...

Page 4

... Revision: 10-Dec-12 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT SMBJ5.0A thru SMBJ188A Vishay General Semiconductor 200 100 10 100 1000 1 Fig ...

Page 5

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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