IS42S86400B-7TL-TR ISSI, Integrated Silicon Solution Inc, IS42S86400B-7TL-TR Datasheet

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... Integrated Silicon Solution, Inc. — www.issi.com Rev. G 04/08/2011 OVERVIEW ISSI 's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. IS42S86400B 16Mx8x4 Banks 54-pin TSOPII KEY TIMING PARAMETERS Parameter Clk Cycle Time CAS Latency = 3 CAS Latency = 2 Clk Frequency CAS Latency = 3 CAS Latency = 2 Access Time from Clock ...

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... IS42S86400B, IS42/45S16320B DEVICE OVERVIEW The 512Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V V and 3.3V V memory systems containing 536,870,912 ddq bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 134,217,728-bit bank is or- ganized as 8,192 rows by 1024 columns by 16 bits. Each of the x8's 134,217,728-bit banks is organized as 8,192 rows by 2048 columns by 8 bits. The 512Mb SDRAM includes an AUTO REFRESH MODE, and a power-saving, power-down mode. All signals are registered on the positive edge of the clock signal, CLK ...

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... IS42S86400B, IS42/45S16320B PIN CONFIGURATIONS 54 pin TSOP - Type II for x8 PIN DESCRIPTIONS A0-A12 Row Address Input A0-A9, A11 Column Address Input BA0, BA1 Bank Select Address DQ0 to DQ7 Data I/O CLK System Clock Input CKE Clock Enable CS Chip Select RAS Row Address Strobe Command CAS Column Address Strobe Command Integrated Silicon Solution, Inc. — www.issi.com Rev. G 04/08/2011 DQ0 2 53 DQ7 ...

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... IS42S86400B, IS42/45S16320B PIN CONFIGURATIONS 54 pin TSOP - Type II for x16 PIN DESCRIPTIONS A0-A12 Row Address Input A0-A9 Column Address Input BA0, BA1 Bank Select Address DQ0 to DQ15 Data I/O CLK System Clock Input CKE Clock Enable CS Chip Select RAS Row Address Strobe Command Column Address Strobe Command CAS DQ0 2 53 DQ15 DQ1 4 51 DQ14 DQ2 5 50 DQ13 DQ3 7 DQ12 ...

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... IS42S86400B, IS42/45S16320B PIN CONFIGURATION 54-ball W-BGA for x16 (Top View) (11. 13.00 mm Body, 0.8 mm Ball Pitch) package code: B PIN DESCRIPTIONS A0-A12 Row Address Input A0-A9 Column Address Input BA0, BA1 Bank Select Address DQ0 to DQ15 Data I/O CLK System Clock Input CKE Clock Enable CS Chip Select RAS Row Address Strobe Command CAS Column Address Strobe Command Integrated Silicon Solution, Inc. — www.issi.com Rev ...

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... IS42S86400B, IS42/45S16320B PIN FUNCTIONS Symbol Type A0-A12 Input Pin BA0, BA1 Input Pin Input Pin CAS CKE Input Pin CLK Input Pin CS Input Pin DQML, Input Pin DQMH DQM Input Pin DQ -DQ (x8) or Input/Output -DQ (x16 Input Pin RAS Input Pin ower Supply Pin ddq V P ower Supply Pin ower Supply Pin ssq V P ower Supply Pin ss 6 Function (In Detail) Address Inputs: A0-A12 are sampled during the ACTIVE command (row-address A0-A12) and READ/WRITE command (column address A0-A9 (x16) ...

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... IS42S86400B, IS42/45S16320B GENERAL DESCRIPTION READ The READ command selects the bank from BA0, BA1 inputs and starts a burst read access to an active row. Inputs A0-A9 (x16); A0-A9, A11 (x8) provides the starting column location. W hen A10 is HIGH, this command functions as an AUTO PRECHARGE command. W hen the auto precharge is selected, the row being accessed will be precharged at the end of the READ burst. The row will remain open for subsequent accesses when AUTO PRECHARGE is not selected. DQ’s read data is subject to the logic level on the DQM inputs two clocks earlier. When a given DQM signal was registered HIGH, the corresponding DQ’ ...

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... IS42S86400B, IS42/45S16320B COMMAND TRUTH TABLE CKE Function n – 1 Device deselect (DESL operation (NOP) H Burst stop (BST) H Read H Read with auto precharge H Write H Write with auto precharge H Bank activate (ACT) H Precharge select bank (PRE) H Precharge all banks (PALL) H CBR Auto-Refresh (REF) H Self-Refresh (SELF) H Mode register set (MRS) H Note: H Valid Data DQM TRUTH TABLE Function Data write / output enable Data mask / output disable ...

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... IS42S86400B, IS42/45S16320B CKE TRUTH TABLE Current State /Function Activating Clock suspend mode entry Any Clock suspend mode Clock suspend mode exit Auto refresh command Idle (REF) Self refresh entry Idle (SELF) Power down entry Idle Self refresh exit Power down exit Note: H Valid Data Integrated Silicon Solution, Inc. — www.issi.com Rev. G 04/08/2011 CKE n – RAS CAS × × × × × ...

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... IS42S86400B, IS42/45S16320B FUNCTIONAL TRUTH TABLE Current State CS RAS CAS WE Idle Row Active Read Write Note: H Valid Data, BA= Bank Address, CA+Column Address, RA=Row Address, OC= Op-Code Address Command X X DESL H X NOP L X BST H BA, CA, A10 READ/READA L A, CA, A10 WRIT/ WRITA H BA, RA ACT L BA, A10 PRE/PALL H X REF/SELF ...

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... IS42S86400B, IS42/45S16320B FUNCTIONAL TRUTH TABLE Continued: Current State CS RAS CAS WE Read with auto H × × Precharging Write with Auto H × × Precharge Precharging H × × Row Activating H × × Note: H Valid Data, BA= Bank Address, CA+Column Address, RA=Row Address, OC= Op-Code Integrated Silicon Solution, Inc. — www.issi.com Rev. G 04/08/2011 Address Command × ...

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... IS42S86400B, IS42/45S16320B FUNCTIONAL TRUTH TABLE Continued: Current State CS RAS CAS WE Write Recovering H × × Write Recovering H × × with Auto Precharge Refresh H × × Mode Register H × × Accessing L L × Note: H Valid Data, BA= Bank Address, CA+Column Address, RA=Row Address, OC= Op-Code Notes: 1. All entries assume that CKE is active (CKEn-1=CKEn=H both banks are idle, and CKE is inactive (Low), the device will enter Power Down mode. All input buffers except CKE will be disabled. 3. Illegal to bank in specified states ...

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... IS42S86400B, IS42/45S16320B CKE RELATED COMMAND TRUTH TABLE Current State Operation Self-Refresh (S.R.) INVALID, CLK ( would exit S.R. Self-Refresh Recovery Self-Refresh Recovery Illegal Illegal Maintain S.R. Self-Refresh Recovery Idle After t rc Idle After t rc Illegal Illegal Begin clock suspend next cycle Begin clock suspend next cycle Illegal Illegal Exit clock suspend next cycle Maintain clock suspend Power-Down (P.D.) INVALID, CLK ( would exit P.D. EXIT P.D. --> Idle (2) Maintain power down mode All Banks Idle ...

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... IS42S86400B, IS42/45S16320B STATE DIAGRAM Mode Register Set Write CKE WRITE WRITE SUSPEND CKE CKE WRITEA WRITEA SUSPEND CKE Precharge POWER ON 14 SELF SELF exit MRS IDLE CKE CKE ACT CKE Row Active CKE BST BST Read Write Read Write Precharge Integrated Silicon Solution, Inc. — www.issi.com ...

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... IS42S86400B, IS42/45S16320B ABSOLUTE MAXIMUM RATINGS Symbol Parameters V Maximum Supply Voltage dd max V Maximum Supply Voltage for Output Buffer ddq max V Input Voltage in V Output Voltage out P Allowable Power Dissipation d max I output Shorted Current cs T operating Temperature opr T Storage Temperature stg Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. All voltages are referenced to Vss. ...

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... IS42S86400B, IS42/45S16320B DC ELECTRICAL CHARACTERISTICS 1 Symbol Parameter i Operating Current (1) dd1 i Precharge Standby Current dd2p (In Power-Down Mode) i Precharge Standby Current dd2ps (In Power-Down Mode) i Precharge Standby Current (2) dd2n (In Non Power-Down Mode) I Precharge Standby Current dd2ns (In Non Power-Down Mode) I Active Standby Current dd3p (Power-Down Mode) I Active Standby Current dd3ps (Power-Down Mode) i Active Standby Current (2) dd3n (In Non Power-Down Mode) I Active Standby Current dd3ns (In Non Power-Down Mode) i Operating Current dd4 i Auto-Refresh Current dd5 i Self-Refresh Current dd6 Notes specified at the output open condition. ...

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... IS42S86400B, IS42/45S16320B AC ELECTRICAL CHARACTERISTICS Symbol Parameter t Clock Cycle Time ck3 t ck2 t Access Time From CLK ac3 t ac2 t CLK HIGH Level Width ch t CLK LOW Level Width cl t Output Data Hold Time oh3 t oh2 t Output LOW Impedance Time lz t Output HIGH Impedance Time Output HIGH Impedance Time Input Data Setup Time ( Input Data Hold Time ( Address Setup Time ( Address Hold Time ( CKE Setup Time (2) cks t CKE Hold Time (2) ckh t Command Setup Time (CS, RAS, CAS, WE, DQM) cms t Command Hold Time (CS, RAS, CAS, WE, DQM) cmh ...

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... IS42S86400B, IS42/45S16320B OPERATING FREQUENCY / LATENCY RELATIONSHIPS SYMBOL PARAMETER — Clock Cycle Time — Operating Frequency t CAS Latency cac t Active Command To Read/Write Command Delay Time rcd t RAS Latency ( rac rcd cac t Command Period (REF to REF / ACT to ACT Command Period (ACT to PRE) ras t Command Period (PRE to ACT Command Period (ACT[0] to ACT [1]) rrd t Column Command Delay Time ...

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... IS42S86400B, IS42/45S16320B AC TEST CONDITIONS Input Load t CH 3.0V 1.4V CLK CMS CMH 3.0V INPUT 1. OUTPUT 1.4V AC TEST CONDITIONS Parameter AC Input Levels Input Rise and Fall Times Input Timing Reference Level Output Timing Measurement Reference Level Integrated Silicon Solution, Inc. — www.issi.com Rev. G 04/08/2011 Output Load Output t AC 1.4V 1.4V 50Ω 50Ω Rating ...

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... IS42S86400B, IS42/45S16320B FUNCTIONAL DESCRIPTION The 512Mb SDRAMs are quad-bank DRAMs which operate at 3.3V and include a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 134,217,728-bit banks is organized as 8,192 rows by 1024 columns by 16 bits or 8192 rows by 2048 columns by 8bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence ...

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... IS42S86400B, IS42/45S16320B INITIALIzE AND LOAD MODE REGISTER CLK CKS CKH CKE CMS CMH CMS CMH COMMAND NOP PRECHARGE DQM/ DQML, DQMH A0-A9, A11, A12 ALL BANKS A10 SINGLE BANK BA0, BA1 ALL BANKS Power-up: V Precharge CC and CLK stable all banks T = 200µs Min. ...

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... IS42S86400B, IS42/45S16320B AUTO-REFRESH CYCLE T0 CLK t t CKS CKH CKE t t CMS CMH COMMAND PRECHARGE DQM/ DQML, DQMH A0-A9, A11, A12 ALL BANKS A10 SINGLE BANK BA0, BA1 BANK ( High-Z Notes: 1. CAS latency = Auto NOP NOP Refresh Integrated Silicon Solution, Inc. — www.issi.com ...

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... IS42S86400B, IS42/45S16320B SELF-REFRESH CYCLE T0 t CLK CKS CKH CKE t t CMS CMH COMMAND PRECHARGE DQM/ DQML, DQMH A0-A9, A11, A12 ALL BANKS A10 SINGLE BANK BA0, BA1 BANK High-Z DQ Precharge all active banks Note: 1. Self-Refresh Mode is not supported for A2 grade with T Integrated Silicon Solution, Inc. — www.issi.com Rev ...

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... IS42S86400B, IS42/45S16320B REGISTER DEFINITION Mode Register The mode register is used to define the specific mode of operation of the SDRAM. This definition includes the selection of a burst length, a burst type, a CAS latency, an operating mode and a write burst mode, as shown in MODE REGISTER DEFINITION. The mode register is programmed via the LOAD MODE REGISTER command and will retain the stored information until it is programmed again or the device loses power. MODE REGISTER DEFINITION BA1 BA0 A12 A11 A10 (1) Reserved Write Burst Mode ...

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... IS42S86400B, IS42/45S16320B BURST LENGTH Read and write accesses to the SDRAM are burst oriented, with the burst length being programmable, as shown in MODE REGISTER DEFINITION. The burst length deter- mines the maximum number of column locations that can be accessed for a given READ or WRITE command. Burst lengths locations are available for both the sequential and the interleaved burst types, and a full-page burst is available for the sequential type. The full-page burst is used in conjunction with the BURST TERMINATE command to generate arbitrary burst lengths. Reserved states should not be used, as unknown operation or incompatibility with future versions may result. When a READ or WRITE command is issued, a block of columns equal to the burst length is effectively selected ...

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... IS42S86400B, IS42/45S16320B CAS Latency The CAS latency is the delay, in clock cycles, between the registration of a READ command and the availability of the first piece of output data. The latency can be set to two or three clocks READ command is registered at clock edge n, and the latency is m clocks, the data will be available by clock edge The DQs will start driving as a result of the clock edge one cycle earlier ( 1), and provided that the relevant access times are met, the data will be valid by clock edge For example, assuming that the clock ...

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... IS42S86400B, IS42/45S16320B CHIP OPERATION BANK/ROW ACTIVATION Before any READ or WRITE commands can be issued to a bank within the SDRAM, a row in that bank must be “opened.” This is accomplished via the ACTIVE command, which selects both the bank and the row to be activated (see Activating Specific Row Within Specific Bank). After opening a row (issuing an ACTIVE command), a READ or WRITE command may be issued to that row, subject to the t specification. Minimum t rcd rcd the clock period and rounded up to the next whole number to determine the earliest clock edge after the ACTIVE command on which a READ or WRITE command can be entered ...

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... IS42S86400B, IS42/45S16320B READS READ bursts are initiated with a READ command, as shown in the READ COMMAND diagram. The starting column and bank addresses are provided with the READ command, and auto precharge is either enabled or disabled for that burst access. If auto precharge is enabled, the row being accessed is precharged at the completion of the burst. For the generic READ commands used in the fol- lowing illustrations, auto precharge is disabled. During READ bursts, the valid data-out element from the starting column address will be available following the CAS latency after the READ command. Each subsequent data-out element will be valid by the next positive clock edge ...

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... IS42S86400B, IS42/45S16320B diagram for each possible CAS latency; data element either the last of a burst of four or the last desired of a longer burst. Following the PRECHARGE command, a subsequent command to the same bank cannot be issued until t is met. Note that part of the row precharge time is rp hidden during the access of the last data element(s). In the case of a fixed-length burst being executed to completion, a PRECHARGE command issued at the optimum time (as described above) provides the same operation that would result from the same fixed-length burst with auto precharge ...

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... IS42S86400B, IS42/45S16320B RW1 - READ to WRITE T0 CLK DQM COMMAND READ BANK, ADDRESS COL n DQ CAS Latency - 2 RW2 - READ to WRITE T0 CLK DQM COMMAND READ BANK, ADDRESS COL NOP NOP NOP NOP n+1 D n+2 OUT OUT OUT NOP NOP NOP OUT CAS Latency - 3 Integrated Silicon Solution, Inc. — www.issi.com ...

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... IS42S86400B, IS42/45S16320B CONSECUTIVE READ BURSTS T0 CLK COMMAND READ BANK, ADDRESS COL n DQ CAS Latency - CLK COMMAND READ NOP BANK, ADDRESS COL n DQ CAS Latency - 3 Integrated Silicon Solution, Inc. — www.issi.com Rev. G 04/08/2011 NOP NOP NOP READ BANK, COL n+1 D OUT OUT ...

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... IS42S86400B, IS42/45S16320B RANDOM READ ACCESSES T0 CLK COMMAND READ BANK, ADDRESS COL CLK COMMAND READ BANK, ADDRESS COL n DQ CAS Latency - READ READ READ BANK, BANK, BANK, COL b COL m COL OUT OUT CAS Latency - READ READ READ NOP BANK, BANK, BANK, COL b ...

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... IS42S86400B, IS42/45S16320B READ BURST TERMINATION T0 CLK COMMAND READ BANK a, ADDRESS COL n DQ CAS Latency - CLK COMMAND READ NOP BANK, ADDRESS COL n DQ CAS Latency - 3 Integrated Silicon Solution, Inc. — www.issi.com Rev. G 04/08/2011 BURST NOP NOP NOP TERMINATE n+1 D OUT OUT T2 T3 ...

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... IS42S86400B, IS42/45S16320B ALTERNATING BANK READ ACCESSES CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/ DQML, DQMH A0-A9, A11, A12 ROW ENABLE AUTO PRECHARGE A10 ROW BA0, BA1 BANK BANK 0 RCD t RRD t - BANK 0 RAS t - BANK 0 RC Notes: 1) CAS latency = 2, Burst Length = 4 2) x16: A11 and A12 = " ...

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... IS42S86400B, IS42/45S16320B READ - FULL-PAGE BURST CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP t CMS DQM/ DQML, DQMH A0-A9, A11, A12 ROW COLUMN A10 ROW BA0, BA1 BANK DQ t RCD Notes: 1) CAS latency = 2, Burst Length = Full Page 2) x16: A11 and A12 = "Don't Care" ...

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... IS42S86400B, IS42/45S16320B READ - DQM OPERATION CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/ DQML, DQMH A0-A9, A11, A12 ROW ENABLE AUTO PRECHARGE A10 ROW DISABLE AUTO PRECHARGE BA0, BA1 BANK DQ t RCD Notes: 1) CAS latency = 2, Burst Length = 4 2) x16: A11 and A12 = "Don't Care" ...

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... IS42S86400B, IS42/45S16320B READ to PRECHARGE T0 T1 CLK COMMAND READ NOP BANK a, ADDRESS COL n DQ CAS Latency - CLK COMMAND READ NOP BANK, ADDRESS COL n DQ CAS Latency - 3 Integrated Silicon Solution, Inc. — www.issi.com Rev. G 04/08/2011 NOP NOP NOP PRECHARGE BANK (a or all n+1 ...

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... IS42S86400B, IS42/45S16320B WRITES WRITE bursts are initiated with a WRITE command, as shown in WRITE Command diagram. WRITE COMMAND CLK HIGH CKE CS RAS CAS WE A0-A9 COLUMN ADDRESS A11, A12 AUTO PRECHARGE A10 NO PRECHARGE BA0, BA1 BANK ADDRESS The starting column and bank addresses are provided with the WRITE command, and auto precharge is either enabled or disabled for that access. If auto precharge is enabled, the row being accessed is precharged at the completion of the burst. For the generic WRITE commands used in the following illustrations, auto precharge is disabled. ...

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... IS42S86400B, IS42/45S16320B WRITE BURST COMMAND ADDRESS WRITE TO WRITE RANDOM WRITE CYCLES COMMAND ADDRESS Integrated Silicon Solution, Inc. — www.issi.com Rev. G 04/08/2011 CLK WRITE NOP NOP BANK, COL n CLK COMMAND WRITE NOP BANK, ADDRESS COL n DON'T CARE CLK WRITE WRITE WRITE BANK, ...

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... IS42S86400B, IS42/45S16320B WRITE to READ T0 CLK COMMAND WRITE BANK, ADDRESS COL WP1 - WRITE to PRECHARGE T0 CLK DQM COMMAND WRITE BANK a, ADDRESS COL NOP READ NOP BANK, COL b D n+1 IN CAS Latency - NOP NOP PRECHARGE BANK (a or all) t DPL D n Integrated Silicon Solution, Inc. — www.issi.com ...

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... IS42S86400B, IS42/45S16320B WP2 - WRITE to PRECHARGE T0 CLK DQM COMMAND WRITE BANK a, ADDRESS COL WRITE Burst Termination COMMAND ADDRESS Integrated Silicon Solution, Inc. — www.issi.com Rev. G 04/08/2011 NOP NOP PRECHARGE BANK (a or all) t DPL D n CLK BURST WRITE TERMINATE COMMAND BANK, (ADDRESS) COL n ...

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... IS42S86400B, IS42/45S16320B WRITE - FULL PAGE BURST CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/DQML DQMH A0-A9, A11, A12 ROW A10 ROW BA0, BA1 BANK DQ t RCD Notes: 1) Burst Length = Full Page 2) x16: A11 and A12 = "Don't Care" x8: A12 = "Don't Care" ...

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... IS42S86400B, IS42/45S16320B WRITE - DQM OPERATION T0 t CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE DQM/DQML DQMH A0-A9, A11, A12 ROW A10 ROW BA0, BA1 BANK DQ Notes: 1) Burst Length = 4 2) x16: A11 and A12 = "Don't Care" x8: A12 = "Don't Care" Integrated Silicon Solution, Inc. — www.issi.com Rev ...

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... IS42S86400B, IS42/45S16320B ALTERNATING BANK WRITE ACCESSES CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP t DQM/DQML DQMH A0-A9, A11, A12 ROW ENABLE AUTO PRECHARGE A10 ROW BA0, BA1 BANK BANK 0 RCD t RRD t - BANK 0 RAS t - BANK 0 RC Notes: 1) Burst Length = 4 2) x16: A11 and A12 = "Don't Care" ...

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... IS42S86400B, IS42/45S16320B CLOCK SUSPEND Clock suspend mode occurs when a column access/burst is in progress and CKE is registered LOW. In the clock suspend mode, the internal clock is deactivated, “freezing” the synchronous logic. For each positive clock edge on which CKE is sampled LOW, the next internal positive clock edge is suspended. Any command or data present on the input pins at the time Clock Suspend During WRITE Burst T0 CLK CKE INTERNAL CLOCK COMMAND NOP ADDRESS DQ Clock Suspend During READ Burst ...

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... IS42S86400B, IS42/45S16320B CLOCK SUSPEND MODE CLK CKS CKH CKE t t CMS CMH COMMAND READ NOP t t CMS CMH DQM/DQML DQMH A0-A9, A11, A12 COLUMN m ( A10 BA0, BA1 BANK DQ Notes: 1) CAS latency = 3, Burst Length = 2, Auto Precharge is disabled. 2) x16: A11 and A12 = "Don't Care" ...

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... IS42S86400B, IS42/45S16320B PRECHARGE The PRECHARGE command (see figure) is used to deac- tivate the open row in a particular bank or the open row in all banks bank(s) will be available for a subsequent row access some specified time (t ) after the PRECHARGE rp command is issued. Input A10 determines whether one or all banks are to be precharged, and in the case where only one bank precharged, inputs BA0, BA1 select the bank. When all banks are to be precharged, inputs BA0, BA1 are treated as “Don’t Care.” Once a bank has been precharged the idle state and must be activated prior to any READ or WRITE commands being issued to that bank ...

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... IS42S86400B, IS42/45S16320B POWER-DOWN MODE CYCLE T0 CLK t t CKS CKH CKE t t CMS CMH COMMAND PRECHARGE DQM/DQML DQMH A0-A9, A11, A12 ALL BANKS A10 SINGLE BANK BA0, BA1 BANK High-Z DQ Two clock cycles All banks idle, enter Precharge all active banks power-down mode ...

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... IS42S86400B, IS42/45S16320B BURST READ/SINGLE WRITE The burst read/single write mode is entered by programming the write burst mode bit (M9) in the mode register to a logic 1. In this mode, all WRITE commands result in the access of a single column location (burst of one), regardless of the programmed burst length. READ commands access columns according to the programmed burst length and sequence, just as in the normal mode of operation (M9 = 0). CONCURRENT AUTO PRECHARGE An access command (READ or WRITE) to another bank while an access command with auto precharge enabled is executing is not allowed by SDRAMs, unless the SDRAM supports CONCURRENT AUTO PRECHARGE. ISSI ...

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... IS42S86400B, IS42/45S16320B WRITE with Auto Precharge 3. Interrupted by a READ (with or without auto precharge): A READ to bank m will interrupt a WRITE on bank n when registered, with the data-out appearing (CAS latency) later. The PRECHARGE to bank n will begin after t is met, where t begins when the READ to bank m is dpl registered. The last valid WRITE to bank n will be data-in registered one clock prior to the READ to bank m. ...

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... IS42S86400B, IS42/45S16320B SINGLE READ WITH AUTO PRECHARGE CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/DQML DQMH A0-A9, A11, A12 ROW A10 ROW BA0, BA1 BANK DQ t RCD t RAS t RC Notes: 1) CAS latency = 2, Burst Length = 1 2) x16: A11 and A12 = "Don't Care" ...

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... IS42S86400B, IS42/45S16320B SINGLE READ WITHOUT AUTO PRECHARGE CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/DQML DQMH A0-A9, A11, A12 ROW A10 ROW t t DISABLE AUTO PRECHARGE AS AH BA0, BA1 BANK DQ t RCD t RAS t RC Notes: 1) CAS latency = 2, Burst Length = 1 2) x16: A11 and A12 = " ...

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... IS42S86400B, IS42/45S16320B READ WITH AUTO PRECHARGE CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/DQML DQMH A0-A9, A11, A12 ROW ENABLE AUTO PRECHARGE A10 ROW BA0, BA1 BANK DQ t RCD t RAS t RC Notes: 1) CAS latency = 2, Burst Length = 4 2) x16: A11 and A12 = "Don't Care" ...

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... IS42S86400B, IS42/45S16320B READ WITHOUT AUTO PRECHARGE CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/DQML DQMH A0-A9, A11, A12 ROW A10 ROW t t DISABLE AUTO PRECHARGE AS AH BA0, BA1 BANK DQ t RCD t RAS t RC Notes: 1) CAS latency = 2, Burst Length = 4 2) x16: A11 and A12 = "Don't Care" ...

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... IS42S86400B, IS42/45S16320B SINGLE WRITE WITH AUTO PRECHARGE CLK t t CKS CKH CKE t t CMS CMH ACTIVE NOP COMMAND DQM/DQML, DQMH A0-A9, A11, A12 ROW A10 ROW BA0, BA1 BANK DQ t RCD t RAS t RC Notes: 1) Burst Length = 1 2) x16: A11 and A12 = "Don't Care" ...

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... IS42S86400B, IS42/45S16320B SINGLE WRITE - WITHOUT AUTO PRECHARGE CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/DQML DQMH A0-A9, A11, A12 ROW DISABLE AUTO PRECHARGE A10 ROW BA0, BA1 BANK DQ t RCD t RAS t RC Notes: 1) Burst Length = 1 2) x16: A11 and A12 = "Don't Care" ...

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... IS42S86400B, IS42/45S16320B WRITE - WITH AUTO PRECHARGE CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP t CMS DQM/DQML DQMH A0-A9, A11, A12 ROW ENABLE AUTO PRECHARGE A10 ROW BA0, BA1 BANK RCD t RAS t RC Notes: 1) Burst Length = 4 2) x16: A11 and A12 = "Don't Care" ...

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... IS42S86400B, IS42/45S16320B WRITE - WITHOUT AUTO PRECHARGE CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/DQML DQMH A0-A9, A11, A12 ROW A10 ROW t t DISABLE AUTO PRECHARGE AS AH BA0, BA1 BANK DQ t RCD t RAS t RC Notes: 1) Burst Length = 4 2) x16: A11 and A12 = "Don't Care" ...

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... IS42S86400B, IS42/45S16320B ORDERING INFORMATION - V Commercial Range +70 o Frequency Speed (ns) Order Part No. 166 MHz 6 IS42S86400B-6TL IS42S16320B-6TL IS42S16320B-6BL 143 MHz 7 IS42S86400B-7TL IS42S16320B-7TL IS42S16320B-7BL 133 MHz 7.5 IS42S86400B-75ETL IS42S16320B-75ETL Industrial Range: - +85 o Frequency Speed (ns) Order Part No. 166 MHz 6 IS42S86400B-6TLI IS42S16320B-6TLI IS42S16320B-6BLI 143 MHz 7 IS42S86400B-7TLI IS42S16320B-7TLI IS42S16320B-7BLI 133 MHz 7.5 IS42S86400B-75ETLI 54-Pin TSOPII, Alloy42 leadframe plated with matte Sn ...

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... IS42S86400B, IS42/45S16320B 60 Integrated Silicon Solution, Inc. — www.issi.com Rev. G 04/08/2011 ...

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... IS42S86400B, IS42/45S16320B Integrated Silicon Solution, Inc. — www.issi.com Rev. G 04/08/2011 61 ...

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... IS42S86400B, IS42/45S16320B 6.50 ±0.1 3. Integrated Silicon Solution, Inc. — www.issi.com 04/08/2011 Rev. G ...