MT46H16M32LFCX-5:B TR Micron Technology Inc, MT46H16M32LFCX-5:B TR Datasheet - Page 77
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MT46H16M32LFCX-5:B TR
Manufacturer Part Number
MT46H16M32LFCX-5:B TR
Description
IC DDR SDRAM 512MBIT 90VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT46H16M32LFCX-5B.pdf
(98 pages)
Specifications of MT46H16M32LFCX-5:B TR
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
512M (16M x 32)
Speed
200MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Figure 39: WRITE-to-READ – Uninterrupting
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
Command
Address
t
t
t
DQSSnom
DQSSmin
DQSSmax
DQS
DQ
DQS
DQ
DQS
DQ
CK#
DM
DM
DM
CK
5
5
5
1
WRITE
Bank a,
Col b
T0
Notes:
t
t
2,3
t
DQSS
DQSS
DQSS
1. The READ and WRITE commands are to the same device. However, the READ and WRITE
2. A10 is LOW with the WRITE command (auto precharge is disabled).
3. An uninterrupted burst of 4 is shown.
4.
5. D
D
IN
commands may be to different devices, in which case
READ command could be applied earlier.
t
WTR is referenced from the first positive CK edge after the last data-in pair.
NOP
D
IN
T1
IN
b = data-in for column b; D
D
D
IN
IN
T1n
D
IN
D
D
IN
IN
NOP
D
T2
IN
D
D
IN
IN
D
T2n
IN
77
D
IN
NOP
T3
OUT
512Mb: x16, x32 Mobile LPDDR SDRAM
t
WTR
n = data-out for column n.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
4
Bank a,
READ
Col n
T4
Don’t Care
t
WTR is not required and the
CL = 2
CL = 2
CL = 2
T5
NOP
© 2004 Micron Technology, Inc. All rights reserved.
WRITE Operation
T5n
Transitioning Data
D
D
D
OUT
OUT
OUT
T6
NOP
D
D
D
OUT
OUT
OUT
T6n
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