MT46H16M32LFCX-5:B TR Micron Technology Inc, MT46H16M32LFCX-5:B TR Datasheet - Page 73
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MT46H16M32LFCX-5:B TR
Manufacturer Part Number
MT46H16M32LFCX-5:B TR
Description
IC DDR SDRAM 512MBIT 90VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT46H16M32LFCX-5B.pdf
(98 pages)
Specifications of MT46H16M32LFCX-5:B TR
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
512M (16M x 32)
Speed
200MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Figure 34: Write – DM Operation
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
Command
BA0, BA1
Address
DQS
DQ
CK#
CKE
A10
DM
CK
6
t
t
IS
IS
NOP
T0
t
1
t
IH
IH
Notes:
t
t
ACTIVE
IS
Bank x
IS
Row
Row
T1
t
t
IH
IH
1. NOP commands are shown for ease of illustration; other commands may be valid at
2. BL = 4 in the case shown.
3. PRE = PRECHARGE.
4. Disable auto precharge.
5. Bank x at T8 is “Don’t Care” if A10 is HIGH at T8.
6. D
t
CK
these times.
t
t
IN
RCD
RAS
n = data-in from column n.
NOP
T2
1
t
CH
t
CL
t
WPRES
t
WRITE
IS
Bank x
Note 4
Col n
T3
t
IH
t
2
DQSS (NOM)
t
73
DS
NOP
T4
D
512Mb: x16, x32 Mobile LPDDR SDRAM
IN
t
WPRE
1
t
DH
T4n
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
DQSL
NOP
D
T5
IN
t
DQSH
1
T5n
t
WPST
NOP
T6
1
Don’t Care
© 2004 Micron Technology, Inc. All rights reserved.
WRITE Operation
t
NOP
WR
T7
1
1
Transitioning Data
One bank
All banks
Bank x
PRE
T8
3
5
t
RP
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