MT46H16M32LFCX-5:B TR Micron Technology Inc, MT46H16M32LFCX-5:B TR Datasheet - Page 49
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MT46H16M32LFCX-5:B TR
Manufacturer Part Number
MT46H16M32LFCX-5:B TR
Description
IC DDR SDRAM 512MBIT 90VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT46H16M32LFCX-5B.pdf
(98 pages)
Specifications of MT46H16M32LFCX-5:B TR
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
512M (16M x 32)
Speed
200MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Figure 16: Initialize and Load Mode Registers
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
Command
BA0, BA1
Address
V
DQS
V
DDQ
CK#
CKE
A10
DM
DQ
CK
DD
1
LVCMOS
HIGH LEVEL
Power-up: V
Notes:
NOP 2
T = 200µs
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DD
1. PRE = PRECHARGE command; LMR = LOAD MODE REGISTER command; AR = AUTO RE-
2. NOP or DESELECT commands are required for at least 200μs.
3. Other valid commands are possible.
4. NOPs or DESELECTs are required during this time.
and CK stable
t
IS
FRESH command; ACT = ACTIVE command.
NOP
T0
High-Z
High-Z
t
IH
t
CH
t
CK
t
CL
All banks
t
IS
PRE
T1
t
IH
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RP
4
AR
Ta0
49
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512Mb: x16, x32 Mobile LPDDR SDRAM
4
Tb0
AR
Micron Technology, Inc. reserves the right to change products or specifications without notice.
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Load standard
mode register
4
t
t
t
Op-code
Op-code
BA0 = L,
IS
IS
IS
BA1 = L
Tc0
LMR
t
t
t
IH
IH
IH
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MRD
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Load extended
mode register
4
Op-code
Op-code
BA0 = L,
BA1 = H
LMR
Td0
© 2004 Micron Technology, Inc. All rights reserved.
t
MRD
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4
ACT
Te0
Row
Bank
Row
Initialization
3
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Don’t Care
NOP
Tf0
3
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