BC847BPDXV6T5 ON Semiconductor, BC847BPDXV6T5 Datasheet - Page 7

• Manufacturer Part Number: BC847BPDXV6T5
• Description: Transistors Bipolar - BJT 100mA 50V Dual
• Manufacturer: ON Semiconductor

Specifications of BC847BPDXV6T5

• Product Category: Transistors Bipolar - BJT
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: - 50 V, + 50 V
• Collector- Emitter Voltage Vceo Max: - 45 V, + 45 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: +/- 45 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 150 at 10 uA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-563-6
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 357 mW
• Minimum Operating Temperature: - 55 C

6
1
e
−X−
D
5
2
4
3
b
0.08 (0.003)
−Y−
6 5 PL
E
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
M
BC847BPDXV6T1, BC847BPDXV6T5
X
Y
0.0531
1.35
A
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
http://onsemi.com
SOT−563, 6 LEAD
CASE 463A−01
H
C
L
0.0197
E
0.0118
0.5
ISSUE F
0.3
0.0394
1.0
7
0.0197
0.5
SCALE 20:1
0.0177
0.45
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
inches
mm
Y14.5M, 1982.
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
DIM
H
A
b
C
D
E
L
e
E
0.50
0.17
0.08
1.50
1.10
0.10
1.50
MIN
MILLIMETERS
0.5 BSC
NOM
0.55
0.22
0.12
1.60
1.20
0.20
1.60
MAX
0.60
0.27
0.18
1.70
1.30
0.30
1.70
0.020
0.007
0.003
0.059
0.043
0.004
0.059
MIN
0.02 BSC
INCHES
0.021
0.009
0.005
0.062
0.047
0.008
0.062
NOM
0.023
0.007
0.066
0.051
0.012
0.066
0.011
MAX