IS43R32800B-5B ISSI, Integrated Silicon Solution Inc, IS43R32800B-5B Datasheet - Page 29
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IS43R32800B-5B
Manufacturer Part Number
IS43R32800B-5B
Description
IC DDR SDRAM 256MBIT 144BGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet
1.IS43R32800B-6BL-TR.pdf
(39 pages)
Specifications of IS43R32800B-5B
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
256M (8Mx32)
Speed
200MHz
Interface
Parallel
Voltage - Supply
2.4 V ~ 2.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
144-BGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS43R32800B-5BL
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Company:
Part Number:
IS43R32800B-5BL-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS43R32800B
Integrated Silicon Solution, Inc. — www.issi.com
Rev. 00D
03/19/08
BURST INTERRUPTION
Read I nterru pted by Read
RE AD to RE AD interval is minimum 1CL K.
R ead I nterru pted by prechar ge
minimum 1 CL K. A P RE command to output disable latency is equivalent to the /CA S L atency.
As a result, RE AD to PR E i nterval determines valid data length to be output. T he figure below
shows examples of B L=8.
Burst read operation can be interrupted by new read of any bank. R andom column access is allowed.
Burst read operation can be interrupted by precharge of the same bank. R EA D to PRE interval is
CL=2 .0
Command
A0-7 ,9-11
BA 0,1
/CLK
DQS
CL K
A8
DQ
Command
Command
Command
RE AD RE AD
/CLK
DQS
DQS
DQS
CL K
00
Yi
DQ
DQ
DQ
0
00
Yj
0
Read Int err upted by Prechar ge (B L=8)
RE AD
Read Int err upted by Read (B L=8, CL=2 )
RE AD
RE AD
Qai0 Qai1 Qaj0 Qaj1 Qaj2 Qaj3 Qak0 Qak1 Qak2 Qak3 Qak4 Qak5 Qal0 Qal1 Qal2
RE AD
10
PR E
Yk
0
PR E
Q0
Q0
Q0
0
Q1
Q1
Q1
PR E
Q2
Q2
RE AD
Q3
Q3
01
Yl
Q4
Q5
Qal3 Qal4 Qal5 Qal6 Qal7
29