MT46V128M4P-6T:F Micron Technology Inc, MT46V128M4P-6T:F Datasheet - Page 69
![IC DDR SDRAM 512MBIT 6NS 66TSOP](/photos/7/22/72288/mfg557-66-tsop_sml.jpg)
MT46V128M4P-6T:F
Manufacturer Part Number
MT46V128M4P-6T:F
Description
IC DDR SDRAM 512MBIT 6NS 66TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT46V32M16P-5BF_TR.pdf
(91 pages)
Specifications of MT46V128M4P-6T:F
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
512M (128Mx4)
Speed
6ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Figure 34:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
Command
BA0, BA1
Case 1:
Case 2:
Address
DQS
DQS
CK#
CKE
A10
DM
DQ
DQ
CK
t
t
AC (MIN) and
AC (MAX) and
Bank READ – Without Auto Precharge
t
t
IS
NOP
IS
T0
t
1
Notes:
t
IH
t
IH
DQSCK (MIN)
t
DQSCK (MAX)
t
t
Bank x
IS
IS
1. NOP commands are shown for ease of illustration; other commands may be valid at these
2. BL = 4.
3. The PRECHARGE command can only be applied at T5 if
4. Disable auto precharge.
5. “Don’t Care” if A10 is HIGH at T5.
6. DO n (or b) = data-out from column n (or column b); subsequent elements are provided in
7. Refer to Figure 35 on page 70, Figure 36 on page 71, and Figure 37 on page 72 for detailed
Row
Row
ACT
T1
t
t
times.
the programmed order.
DQS and DQ timing.
IH
IH
t
CK
t
t RAS 3
t
RCD
RC
NOP
T2
1
t
CH
t
CL
Bank x
READ
t
4
IS
Col n
T3
2
t
t
IH
LZ (MIN)
CL = 2
69
NOP
T4
t
1
RPRE
t
LZ (MIN)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
RPRE
One bank
All banks
Bank x
PRE
T5
t
3
DO
t
DQSCK (MIN)
n
DQSCK (MAX)
512Mb: x4, x8, x16 DDR SDRAM
5
t
AC (MIN)
DO
t
n
AC (MAX)
T5n
t
RP
NOP
t
RAS (MIN) is met.
T6
1
Transitioning Data
t
HZ (MAX)
T6n
t
RPST
©2000 Micron Technology, Inc. All rights reserved.
t
RPST
NOP
T7
1
Operations
Bank x
Don’t Care
Row
Row
ACT
T8
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