MT46V32M16TG-6T IT:F TR Micron Technology Inc, MT46V32M16TG-6T IT:F TR Datasheet - Page 39
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MT46V32M16TG-6T IT:F TR
Manufacturer Part Number
MT46V32M16TG-6T IT:F TR
Description
IC DDR SDRAM 512MBIT 6NS 66TSOP
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46V32M16P-5BF_TR.pdf
(91 pages)
Specifications of MT46V32M16TG-6T IT:F TR
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
512M (32Mx16)
Speed
6ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
-40°C ~ 85°C
Package / Case
66-TSOP
Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
700ps
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
195mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Figure 15:
Figure 16:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
Reduced Drive Pull-Down Characteristics
Reduced Drive Pull-Up Characteristics
40. The voltage levels used are derived from a minimum V
41.
42. V
43.
39d. The driver pull-up current variation, within nominal voltage and temperature
39e. The full ratio variation of the MAX-to-MIN pull-up and pull-down current should
39f. The full ratio variation of the nominal pull-up to pull-down current should be
80
70
60
50
40
30
20
10
0
load. In practice, the voltage levels obtained from a properly terminated bus will pro-
vide significantly different voltage values.
V
width can not be greater than 1/3 of the cycle rate. VIL undershoot: VIL (MIN) =
for a pulse width ≤ 3ns, and the pulse width can not be greater than 1/3 of the cycle
rate.
t
prevail over
-10
-20
-30
-40
-50
-60
-70
-80
HZ (MAX) will prevail over
0 . 0
0
IH
DD
0.0
limits, is expected, but not guaranteed, to lie within the inner bounding lines of
the V-I curve of Figure 16 on page 39.
be between 0.71 and 1.4 for device drain-to-source voltages from 0.1V to 1.0V at
the same voltage and temperature.
unity ±10%, for device drain-to-source voltages from 0.1V to 1.0V.
overshoot: V
and V
DD
0 . 5
0.5
t
DQSCK (MIN) +
Q must track each other.
IH
(MAX) = V
1 . 0
1.0
V
DD
V
Q - V
OUT
39
(V)
OUT
t
DQSCK (MAX) +
t
(V)
RPRE (MAX) condition.
DD
1 . 5
1.5
Q + 1.5V for a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
2.0
2.0
512Mb: x4, x8, x16 DDR SDRAM
t
RPST (MAX) condition.
pulse width ≤ 3ns, and the pulse
2.5
2.5
DD
level and the referenced test
©2000 Micron Technology, Inc. All rights reserved.
t
LZ (MIN) will
–
1.5V