MT46V32M16TG-6T IT:F TR Micron Technology Inc, MT46V32M16TG-6T IT:F TR Datasheet - Page 38
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MT46V32M16TG-6T IT:F TR
Manufacturer Part Number
MT46V32M16TG-6T IT:F TR
Description
IC DDR SDRAM 512MBIT 6NS 66TSOP
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46V32M16P-5BF_TR.pdf
(91 pages)
Specifications of MT46V32M16TG-6T IT:F TR
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
512M (32Mx16)
Speed
6ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
-40°C ~ 85°C
Package / Case
66-TSOP
Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
700ps
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
195mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Figure 13:
Figure 14:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
Full Drive Pull-Down Characteristics
Full Drive Pull-Up Characteristics
39. Reduced output drive curves:
38d. The driver pull-up current variation within nominal limits of voltage and temper-
39b. The driver pull-down current variation, within nominal voltage and temperature
38c. The full driver pull-up current variation from MIN to MAX process; temperature
38e. The full ratio variation of MAX to MIN pull-up and pull-down current should be
39a. The full driver pull-down current variation from MIN to MAX process; tempera-
39c. The full driver pull-up current variation from MIN to MAX process; temperature
38f. The full ratio variation of the nominal pull-up to pull-down current should be
-100
-120
-140
-160
-180
-200
160
140
120
100
-2 0
-4 0
-6 0
-8 0
80
60
40
20
0
0
0.0
0. 0
and voltage will lie within the outer bounding lines of the V-I curve of Figure 14 on
page 38.
ature is expected, but not guaranteed, to lie within the inner bounding lines of the
V-I curve of Figure 14 on page 38.
between 0.71 and 1.4 for drain-to-source voltages from 0.1V to 1.0V at the same
voltage and temperature.
unity ±10% for device drain-to-source voltages from 0.1V to 1.0V.
ture and voltage will lie within the outer bounding lines of the V-I curve of
Figure 15 on page 39.
limits, is expected, but not guaranteed, to lie within the inner bounding lines of
the V-I curve of Figure 15 on page 39.
and voltage will lie within the outer bounding lines of the V-I curve of Figure 16.
0.5
0 . 5
1. 0
1.0
V
DD
V
Q - V
OUT
38
(V)
OUT
(V)
1 . 5
1.5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
2. 0
2.0
512Mb: x4, x8, x16 DDR SDRAM
2 . 5
2.5
©2000 Micron Technology, Inc. All rights reserved.