NDS335N_Q Fairchild Semiconductor, NDS335N_Q Datasheet - Page 6

• Manufacturer Part Number: NDS335N_Q
• Description: MOSFET N-Ch LL FET Enhancement Mode
• Manufacturer: Fairchild Semiconductor

Specifications of NDS335N_Q

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 1.7 A
• Resistance Drain-source Rds (on): 0.14 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Fall Time: 29 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.5 W
• Rise Time: 29 ns
• Typical Turn-off Delay Time: 28 ns

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Tape and Reel Specification
TAPE FORMAT for US8
TAPE DIMENSIONS inches (millimeters)
TAPE FORMAT for MicroPak
TAPE DIMENSIONS inches (millimeters)
Designator
Designator
Package
Package
K8X
L8X
Leader (Start End)
Leader (Start End)
Trailer (Hub End)
Trailer (Hub End)
Section
Section
Carrier
Carrier
Tape
Tape
Cavities
Cavities
Number
Number
125 (typ)
125 (typ)
75 (typ)
75 (typ)
6
250
250
Cavity
Status
Cavity
Status
Empty
Empty
Empty
Empty
Filled
Filled
Cover Tape
Cover Tape
Status
Status
Sealed
Sealed
Sealed
Sealed
Sealed
Sealed