NDS335N_Q Fairchild Semiconductor, NDS335N_Q Datasheet - Page 5

• Manufacturer Part Number: NDS335N_Q
• Description: MOSFET N-Ch LL FET Enhancement Mode
• Manufacturer: Fairchild Semiconductor

Specifications of NDS335N_Q

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 1.7 A
• Resistance Drain-source Rds (on): 0.14 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Fall Time: 29 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.5 W
• Rise Time: 29 ns
• Typical Turn-off Delay Time: 28 ns

DC Characteristics
FIGURE 3. Typical High Level Output Voltage vs. Supply Voltage
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