IRFW720BTM Fairchild Semiconductor, IRFW720BTM Datasheet - Page 7

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IRFW720BTM

Manufacturer Part Number
IRFW720BTM
Description
MOSFET 400V N-Channel B-FET
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of IRFW720BTM

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.3 A
Resistance Drain-source Rds (on)
1.4 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
D2PAK
Fall Time
35 ns
Forward Transconductance Gfs (max / Min)
2.8 S
Minimum Operating Temperature
- 55 C
Power Dissipation
3.13 W
Rise Time
35 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
35 ns
©2001 Fairchild Semiconductor Corporation
Package Dimensions
1.27
2.54 TYP
0.10
10.00
9.90
0.20
0.20
2.54 TYP
0.80
D
0.10
2
-PAK
10.00
(2XR0.45)
4.50
(8.00)
(4.40)
0.20
0.20
2.40
0.10
1.30
0.80
0.50
Dimensions in Millimeters
+0.10
–0.05
0.20
0.15
+0.10
–0.05
0.10
Rev. B, November 2001

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