IRFW720BTM Fairchild Semiconductor, IRFW720BTM Datasheet - Page 5

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IRFW720BTM

Manufacturer Part Number
IRFW720BTM
Description
MOSFET 400V N-Channel B-FET
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of IRFW720BTM

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.3 A
Resistance Drain-source Rds (on)
1.4 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
D2PAK
Fall Time
35 ns
Forward Transconductance Gfs (max / Min)
2.8 S
Minimum Operating Temperature
- 55 C
Power Dissipation
3.13 W
Rise Time
35 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
35 ns
©2001 Fairchild Semiconductor Corporation
10V
10V
10V
10V
12V
12V
t
t
p
p
3mA
3mA
200nF
200nF
R
R
R
R
G
G
G
G
50KΩ
50KΩ
V
V
V
V
GS
GS
GS
GS
Unclamped Inductive Switching Test Circuit & Waveforms
V
V
300nF
300nF
I
I
I
V
V
DS
DS
D
D
D
DS
DS
Resistive Switching Test Circuit & Waveforms
Gate Charge Test Circuit & Waveform
DUT
DUT
DUT
DUT
Same Type
Same Type
DUT
DUT
L
L L
as DUT
as DUT
R
R
L
L
V
V
DD
DD
V
V
DD
DD
V
V
DS
DS
BV
BV
V
V
V
V
10V
10V
DSS
DSS
V
V
I
I
V
V
DD
DD
GS
GS
AS
AS
DS
DS
GS
GS
E
E
E
10%
10%
AS
AS
AS
Q
Q
90%
90%
=
=
=
gs
gs
t
t
d(on)
d(on)
----
----
----
----
1
1
1
1
2
2
2
2
t
t
on
on
L I
L I
L I
t
t
r
r
I
I
AS
AS
AS
D
D
Q
Q
(t)
(t)
t
t
2
2
2
Q
Q
p
p
g
g
gd
gd
Charge
Charge
--------------------
--------------------
BV
BV
BV
BV
DSS
DSS
DSS
DSS
t
t
- V
- V
d(off)
d(off)
t
t
DD
DD
off
off
Time
Time
t
t
f
f
Rev. B, November 2001
V
V
DS
DS
(t)
(t)

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