BUK9620-55A /T3 NXP Semiconductors, BUK9620-55A /T3 Datasheet - Page 6
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BUK9620-55A /T3
Manufacturer Part Number
BUK9620-55A /T3
Description
MOSFET TAPE13 PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet
1.BUK9620-55A_T3.pdf
(13 pages)
Specifications of BUK9620-55A /T3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
54 A
Resistance Drain-source Rds (on)
0.018 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-404
Fall Time
93 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
118 W
Rise Time
124 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
92 ns
Part # Aliases
BUK9620-55A,118
NXP Semiconductors
BUK9620-55A
Product data sheet
Fig 5.
Fig 7.
(A)
I
D
(A)
10
I
10
10
10
10
10
200
180
160
140
120
100
D
80
60
40
20
-1
-2
-3
-4
-5
-6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
2
V
GS
1
(V) =
min
4
8
typ
6
9
2
max
V
All information provided in this document is subject to legal disclaimers.
8
GS
03aa36
V
DS
(V)
03nc91
10
2.2
(V)
7
6
5
4
3
10
3
Rev. 02 — 4 June 2010
Fig 6.
Fig 8.
R
(mΩ)
(S)
g
DSon
fs
30
25
20
15
10
50
40
30
20
10
0
of drain current; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
2
0
N-channel TrenchMOS logic level FET
20
4
BUK9620-55A
40
6
60
8
© NXP B.V. 2010. All rights reserved.
V
GS
I
D
03nc90
03nc88
(A)
(V)
10
80
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