BUK9620-55A /T3 NXP Semiconductors, BUK9620-55A /T3 Datasheet - Page 4

• Manufacturer Part Number: BUK9620-55A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9620-55A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 54 A
• Resistance Drain-source Rds (on): 0.018 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 93 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 118 W
• Rise Time: 124 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 92 ns
• Part # Aliases: BUK9620-55A,118

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK9620-55A
Product data sheet
Symbol
R
R
Fig 3.
Fig 4.
th(j-mb)
th(j-a)
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Z
(K/W)
th(j-mb)
(A)
I
10
10
10
D
10
10
10
10
−1
−2
−3
1
1
3
2
10
1
−6
P
δ = 0.5
0.2
0.1
0.05
0.02
Single Shot
t
p
T
R
10
DSon
−5
δ =
= V
Conditions
see
mounted on printed-circuit board ;
SOT404 package ; minimum footprint
All information provided in this document is subject to legal disclaimers.
T
t
t
p
DS
/I
Figure 4
D
10
−4
Rev. 02 — 4 June 2010
10
10
−3
D.C.
10
−2
V
DS
N-channel TrenchMOS logic level FET
P
(V)
10
t
p
−1
T
t
100 μs
1 ms
10 ms
100 ms
t
p
p
BUK9620-55A
δ =
Min
-
-
= 10 μs
(s)
03nc94
03nc95
t
T
t
p
10
1
2
Typ
-
50
© NXP B.V. 2010. All rights reserved.
Max
1.2
-
Unit
K/W
K/W
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