BUK7C06-40AITE /T3 NXP Semiconductors, BUK7C06-40AITE /T3 Datasheet - Page 4

• Manufacturer Part Number: BUK7C06-40AITE /T3
• Description: MOSFET TRENCHPLUS MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BUK7C06-40AITE /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 155 A
• Resistance Drain-source Rds (on): 0.006 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-427
• Fall Time: 110 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 272 W
• Rise Time: 115 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 155 ns
• Part # Aliases: BUK7C06-40AITE,118

NXP Semiconductors
BUK7C06-40AITE_5
Product data sheet
Fig 1.
Fig 3.
P
(%)
(A)
I
der
D
120
10
10
80
40
10
0
1
3
2
function of mounting base temperature
Normalized total power dissipation as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
1
capped at 75 A due to package
Limit R
50
DSon
= V
DS
100
/I
D
150
T
mb
03na19
(°C)
Rev. 05 — 16 February 2009
200
DC
10
Fig 2.
(A)
I
D
160
120
80
40
0
mounting base temperature
Continuous drain current as a function of
0
N-channel TrenchPLUS standard level FET
capped at 75A
due to package
50
BUK7C06-40AITE
V
DS
(V)
100
10 ms
100 ms
t
1 ms
100 µs
p
= 10 µs
150
© NXP B.V. 2009. All rights reserved.
T
mb
03ng16
(°C)
03ni28
200
10
2
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