IRF740BPBF Vishay/Siliconix, IRF740BPBF Datasheet - Page 6

• Manufacturer Part Number: IRF740BPBF
• Description: MOSFET 400V 600mOhm@10V 10A N-Ch D-SRS
• Manufacturer: Vishay/Siliconix

Specifications of IRF740BPBF

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 400 V
• Resistance Drain-source Rds (on): 600 mOhms at 10 V
• Configuration: Single
• Package / Case: TO-220AB-3

IRF740, SiHF740
Vishay Siliconix
www.vishay.com
6
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vary t
required I
Fig. 12a - Unclamped Inductive Test Circuit
10 V
p
Fig. 13a - Basic Gate Charge Waveform
to obtain
V
G
AS
R
10 V
Q
G
GS
V
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T
0.01 Ω
L
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
91054_12c
1000
This datasheet is subject to change without notice.
1200
600
800
400
200
0
25
V
DD
+
-
= 50 V
Starting T
V
DD
50
J
, Junction Temperature (°C)
75
100
Top
Bottom
Fig. 12b - Unclamped Inductive Waveforms
V
125
I
AS
DS
12 V
Fig. 13b - Gate Charge Test Circuit
V
GS
4.5 A
5.3 A
Same type as D.U.T.
10 A
I
Current regulator
D
150
0.2 µF
Current sampling resistors
3 mA
50 kΩ
t
0.3 µF
p
I
G
S11-0507-Rev. C, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91054
D.U.T.
V
I
DS
D
+
V
-
V
DD
DS