Document Number: 88640
Revision: 15-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5 mm) lead length at T
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Maximum full load reverse current, full cycle average
0.375" (9.5 mm) lead length at T
Operating junction and storage temperature range
T
V
J
I
I
F(AV)
FSM
RRM
V
max.
I
R
F
SUPERECTIFIER
Glass Passivated Junction Plastic Rectifier
DO-201AD
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
A
A
A
= 55 °C
= 55 °C
= 25 °C unless otherwise noted)
50 V to 1000 V
®
1.2 V, 1.1 V
175 °C
5.0 μA
125 A
3.0 A
This datasheet is subject to change without notice.
SYMBOL GP30A GP30B GP30D GP30G
T
J
V
V
I
I
I
V
R(AV)
, T
F(AV)
FSM
RRM
RMS
DC
STG
50
35
50
FEATURES
• Superectifier
• Cavity-free glass-passivated junction
• Low leakage current, typical I
• Low forward voltage drop
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
TYPICAL APPLICATIONS
For use in high voltage rectification of power supply,
inverters, converters, freewheeling diodes and snubber
circuit application.
MECHANICAL DATA
Case: DO-201AD, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
condition
accordance to WEEE 2002/96/EC
100
100
70
DiodesEurope@vishay.com
Vishay General Semiconductor
200
140
200
structure
- 65 to + 175
400
280
400
125
100
3.0
GP30A thru GP30M
GP30J
for
600
420
600
R
less than 0.1 μA
www.vishay.com/doc?91000
high
GP30K GP30M UNIT
800
560
800
reliability
www.vishay.com
1000
1000
700
μA
°C
V
V
V
A
A
1