STD9NM40N STMicroelectronics, STD9NM40N Datasheet - Page 16

• Manufacturer Part Number: STD9NM40N
• Description: MOSFET N-Ch 400V 0.73Ohm 5.6A pwr Mdmesh II
• Manufacturer: STMicroelectronics

Specifications of STD9NM40N

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 5.6 A
• Resistance Drain-source Rds (on): 0.79 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Fall Time: 8.8 ns
• Gate Charge Qg: 14 nC
• Power Dissipation: 60 W
• Rise Time: 4.4 ns
• Typical Turn-off Delay Time: 25 ns

Packaging mechanical data
16/18
Figure 25. Tape for DPAK (TO-252)
Figure 26. Reel for DPAK (TO-252)
For machine ref. only
including draft and
radii concentric around B0
B1
A
T
REEL DIMENSIONS
K0
D
Top cover
tape
Full radius
B0
Doc ID 023762 Rev 2
User direction of feed
A0
B
10 pitches cumulative
tolerance on tape +/- 0.2 mm
User direction of feed
P0
Access hole
At slot location
40mm min.
P1
Tape start
Tape slot
In core for
D
D1
C
P2
STD9NM40N, STP9NM40N
Bending radius
T
G measured
At hub
F
N
E
AM08851v1
W
AM08852v1
R