CY62136ESL-45ZSXI Cypress Semiconductor Corp, CY62136ESL-45ZSXI Datasheet - Page 6

• Manufacturer Part Number: CY62136ESL-45ZSXI
• Description: IC SRAM 2MBIT 45NS 44TSOP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62136ESL-45ZSXI

• Memory Size: 2M (128K x 16)
• Package / Case: 44-TSOP II
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 2.2 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Maximum Clock Frequency: 1 MHz
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 2.2 V
• Maximum Operating Current: 20 mA
• Organization: 128 K x 16
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Operating Supply Voltage: 2.2 V to 5.5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Data Retention Characteristics
Over the Operating Range
Data Retention Waveform
Notes
Document #: 001-48147 Rev. *C
V
I
t
t
10. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C
11. Chip enable (CE) and byte enables (BHE and BLE) need to be tied to CMOS levels to meet the I
12. Tested initially and after any design or process changes that may affect these parameters
13. Full device operation requires linear V
CCDR
CDR
R
DR
Parameter
[13]
[12]
[11]
V
CE
CC
V
Data retention current
Chip deselect to data
retention time
Operation recovery time
CC
for data retention
Description
CC
ramp from V
V
CC(min)
t
CE > V
V
CDR
DR
IN
Figure 3. Data Retention Waveform
to V
> V
CC(min)
CC
CC
– 0.2 V,
– 0.2 V or V
> 100 s or stable at V
DATA RETENTION MODE
Conditions
IN
V
< 0.2 V
DR
> 1.0 V
CC(min)
SB1
> 100 s
/ I
V
SB2
CC
/ I
= 1.0 V
CCDR
specification. Other inputs can be left floating
CY62136ESL MoBL
V
Min
CC(min)
1.0
45
–
0
t
R
Typ
0.8
–
–
–
[10]
Page 6 of 15
Max
–
3
–
–
Unit
A
ns
ns
V

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