CY7C1520JV18-300BZC Cypress Semiconductor Corp, CY7C1520JV18-300BZC Datasheet - Page 15
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CY7C1520JV18-300BZC
Manufacturer Part Number
CY7C1520JV18-300BZC
Description
IC SRAM 72MBIT 300MHZ 165TFBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C1520JV18-300BZXC.pdf
(26 pages)
Specifications of CY7C1520JV18-300BZC
Format - Memory
RAM
Memory Type
SRAM - Synchronous, DDR II
Memory Size
72M (2M x 36)
Speed
300MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-TFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1520JV18-300BZC
Manufacturer:
SMD
Quantity:
1 988
Company:
Part Number:
CY7C1520JV18-300BZC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C1520JV18-300BZC
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
TAP Controller Block Diagram
TAP Electrical Characteristics
Over the Operating Range
Notes
Document Number: 001-12559 Rev. *C
V
V
V
V
V
V
I
10. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the
11. Overshoot: V
12. All Voltage referenced to Ground.
X
OH1
OH2
OL1
OL2
IH
IL
Parameter
TDI
TCK
TMS
IH
(AC) < V
Output HIGH Voltage
Output HIGH Voltage
Output LOW Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input and Output Load Current
DDQ
Selection
Circuitry
+ 0.85V (Pulse width less than t
[10, 11, 12]
Description
108
31
Boundary Scan Register
CYC
30
Identification Register
.
Instruction Register
/2), Undershoot: V
29
.
TAP Controller
.
.
.
.
IL
(AC) >
I
I
I
I
GND d V
OH
OH
OL
OL
Bypass Register
2
2
2
= 2.0 mA
= 100 PA
=2.0 mA
=100 PA
Test Conditions
1.5V (Pulse width less than t
1
1
1
CY7C1516JV18, CY7C1527JV18
CY7C1518JV18, CY7C1520JV18
I
d V
0
0
0
0
DD
Electrical Characteristics
CYC
Selection
Circuitry
0.65V
/2).
–0.3
Min
1.4
1.6
–5
DD
V
0.35V
DD
Max
Table.
0.4
0.2
5
+ 0.3
DD
Page 15 of 26
TDO
Unit
PA
V
V
V
V
V
V
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