BR93L46F-WE2 Rohm Semiconductor, BR93L46F-WE2 Datasheet - Page 2

• Manufacturer Part Number: BR93L46F-WE2
• Description: IC EEPROM 1KBIT 2MHZ 8SOP
• Manufacturer: Rohm Semiconductor

Specifications of BR93L46F-WE2

• Memory Size: 1K (64 x 16)
• Format - Memory: EEPROMs - Serial
• Memory Type: EEPROM
• Speed: 2MHz
• Interface: Microwire, 3-Wire Serial
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOP
• Clock Frequency: 2MHz
• Supply Voltage Range: 1.8V To 5.5V
• Memory Case Style: SOP
• No. Of Pins: 8
• Operating Temperature Range: -40°C To +85°C
• Svhc: No SVHC (18-Jun-2010)
• Package /: RoHS Compliant
• Organization: 64 K x 16
• Interface Type: Microwire
• Maximum Clock Frequency: 2 MHz
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 1.8 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Operating Supply Voltage: 1.8 V, 5.5 V
• Memory Configuration: 64 X 16
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BR93L46F-WE2TR

* When using at Ta = 25˚C or higher, 4.5mW (*1, *2), 3.0mW (*3), 3.3mW (*4),3.1mW (*5, *6)
to be reduced per 1˚C.
(Unless otherwise specified, Ta=-40 ~ +85˚C, Vcc=1.8 ~ 2.5V)
Impressed voltage
Permissible dissipation
Storage temperature range
Action temperature range
Terminal voltage
"H" input voltage 1
"H" input voltage 2
"H" output voltage 1
"H" output voltage 2
"H" output voltage
"H" input voltage
"L" input voltage 1
"L" input voltage 2
"L" output voltage 1
"L" output voltage 2
Input leak current
Output leak current
Current consumption at
action
Standby current
"L" input voltage
"L" output voltage
Input leak current
Output leak current
Current consumption at
action
Standby current
Number of data rewrite times *1
Data hold years
Radiation resistance design is not made.
Radiation resistance design is not made.
Electrical characteristics (Unless otherwise specified, Ta=-40 ~ +85˚C, Vcc=2.5 ~ 5.5V)
Memory cell characteristics (Ta=25˚C, Vcc=1.8 ~ 5.5V)
Absolute Maximum Ratings (Ta=25˚C)
Parameter
Parameter
Parameter
Parameter
*1
1,000,000
Symbol
Topr
Tstg
V
Symbol
Symbol
Pd
Min.
-
CC
40
V
V
V
V
V
V
V
I
I
I
V
V
I
I
I
V
V
V
I
CC1
CC2
CC3
I
I
CC1
CC2
CC3
I
I
I
OH1
OH2
LO
SB
LO
SB
OL1
OL2
IH1
IH2
OH
IL1
IL2
LI
OL
LI
IL
IH
TSSOP-B8 (FVT, RFVT)
SSOP-B8 (FV, RFV)
TSSOP-B8J (RFVJ)
SOP-J8 (FJ, RFJ)
MSOP8 (RFVM)
0.7xV
0.7 x V
SOP8 (F, RF)
V
V
Typ.
CC
CC
Min.
Min.
-0.3
-0.3
-0.3
-
-
2.0
2.4
-1
-1
-1
-1
0
0
0
-65 ~ +125
-
-
-
-
-
-
-
-
-0.3 ~ +6.5
-40 ~ +85
-0.3 ~ V
-0.2
-0.2
CC
CC
*1 Not 100% TESTED
Max.
Typ.
Typ.
Limits
CC
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
+0.3
V
V
V
0.2x V
0.2 x V
Times
Years
CC
CC
CC
Unit
Max.
Max.
+0.8
450
450
300
330
310
310
V
V
V
0.4
0.2
3.0
1.5
4.5
0.2
1.5
0.5
+1
+1
+1
+1
2
2
2
+0.3
+0.3
+0.3
CC
CC
CC
CC
CC
(*1)
(*2)
(*3)
(*4)
(*5)
(*6)
2/16
Unit
Unit
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
V
V
Unit
mW
˚C
˚C
V
V
4.0V≤V
V
4.0V≤V
V
I
I
I
I
V
V
f
f
f
CS=0V, DO=OPEN
I
I
V
V
f
f
f
CS=0V, DO=OPEN
OL
OL
OH
OH
SK
SK
SK
OL
OH
SK
SK
SK
CC
CC
IN
OUT
IN
OUT
=2.1mA, 4.0V≤V
=100µA
=2MHz, t
=2MHz (READ)
=2MHz, t
=100µA
=500kHz, t
=500kHz (READ)
=500kHz (WRAL,ERAL)
=-0.4mA, 4.0V≤V
=-100µA
=-100µA
=0~V
=0~V
≤4.0V
≤4.0V
=0~V
=0~V
CC
CC
Power source voltage
Input voltage
CC
CC
≤5.5V
≤5.5V
CC
CC
Recommended action conditions
E/W
E/W
, CS=0V
, CS=0V
Conditions
Conditions
E/W
=5ms (WRITE)
=5ms (WRAL,ERAL)
Parameter
=5ms (WRITE)
CC
CC
≤5.5V
≤5.5V
Symbol
V
V
CC
IN
1.8 ~ 5.5
0 ~ V
Limits
CC
Unit
V
V