IS46R16160D-6TLA2-TR ISSI, IS46R16160D-6TLA2-TR Datasheet - Page 10

• Manufacturer Part Number: IS46R16160D-6TLA2-TR
• Description: DRAM 256Mb, 2.5V, 166MHz 64M x 8 DDR1
• Manufacturer: ISSI

Specifications of IS46R16160D-6TLA2-TR

• Rohs: yes
• Organization: 64 M x 8
• Package / Case: TSOP-66
• Memory Size: 256 MB
• Maximum Clock Frequency: 167 MHz
• Access Time: 6 ns
• Supply Voltage - Max: 2.7 V
• Supply Voltage - Min: 2.3 V
• Maximum Operating Temperature: + 105 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT

COMMANDS TRUTH TABLES
All commands (address and control signals) are registered on the positive edge of clock (crossing of CK going high
and CK going low). Truth Table shows basic timing parameters for all commands.
TRUTH TABLE - COMMANDS
TRUTH TABLE - DM Operations
IS43R83200D
IS43/46R16160D, IS43/46R32800D
10
FUNCTION
Write Enable
Write Inhibit
NAME (FUNCTION)
DESELECT (NOP)
NO OPERATION (NOP)
ACTIVE (select bank and activate row)
READ (select bank and column and start read
burst)
READ with AP (read burst with Auto Precharge)
WRITE (select bank and column and start write
burst)
WRITE with AP (write burst with Auto
Precharge)
BURST TERMINATE
PRECHARGE (deactivate row in selected
bank)
PRECHARGE ALL (deactivate rows in all
banks)
AUTO REFRESH or enter SELF REFRESH
MODE REGISTER SET
Notes:
1. All states and sequences not shown are illegal or reserved.
2. DESELECT and NOP are functionally interchangeable.
3. Autoprecharge is non-persistent. AP High enables Auto Precharge, while AP Low disables Autoprecharge.
4. Burst Terminate applies to only Read bursts with Auto Precharge disabled. This command is undefined and should not be
5. If AP is Low, bank address determines which bank is to be precharged. If AP is High, all banks are precharged and BA0-
6. This command is AUTO REFRESH if CKE is High, and SELF REFRESH if CKE is low.
7. All address inputs and I/O are ‘don't care’ except for CKE. Internal refresh counters control bank and row addressing.
8. All banks must be precharged before issuing an AUTO-REFRESH or SELF REFRESH command.
9. BA0 and BA1 value select between MRS and EMRS.
10. CKE is HIGH for all commands shown except SELF REFRESH.
Note: Used to mask write data, provided coincident with the
used for Read with Auto Precharge enabled, and for Write bursts.
BA1are don’t care.
corresponding data.
DM
H
L
Valid
DQ
X
CS
H
L
L
L
L
L
L
L
L
L
L
L
RAS
H
H
H
H
H
H
X
L
L
L
L
L
Auto Precharge (AP)
Row Address (RA)
Column Address (CA)
ADDRESSING
CAS
X
H
H
H
H
H
L
L
L
L
L
L
WE
X
H
H
H
H
H
L
L
L
L
L
L
Valid
Valid
Valid
Valid
Valid
Valid
Valid
BA
X
X
X
X
X
Integrated Silicon Solution, Inc.
A0-A11
A0-A7,
x32
A8
A9
AP
H
H
H
X
X
X
X
L
X
L
L
Op-code
A0-A12
A0-A8
Address
Column
Column
Column
Column
x16
A10
Row
X
X
X
X
X
X
A0-A12
A0-A9
06/19/2012
A10
Notes
x8
6,7,8
Rev. B
2
2
3
3
4
5
5
9