AS4C8M16S-7BCN Alliance Memory, AS4C8M16S-7BCN Datasheet - Page 8
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AS4C8M16S-7BCN
Manufacturer Part Number
AS4C8M16S-7BCN
Description
DRAM 128Mb, 3.3V, 143Mhz 8M x 16 SDRAM
Manufacturer
Alliance Memory
Datasheet
1.AS4C8M16S-7BCN.pdf
(53 pages)
Specifications of AS4C8M16S-7BCN
Rohs
yes
Data Bus Width
16 bit
Organization
8 M x 16
Memory Size
128 MB
Maximum Clock Frequency
143 MHz
Access Time
5 ns, 5.4 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
3 V
Maximum Operating Current
120 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
t
CAS# latency=3
COMMAND
DQM
CLK
CK3,
FEBRUARY 2011
CLK
DQM
COMMAND
CAS# latency=2
t
CK2,
DQ
t
CLK
DQM
COMMAND
CAS# latency=2
CK2,
PrechargeAll command to the same bank. The following figure shows the optimum time that
BankPrecharge/ PrechargeAll command is issued in different CAS# latency.
DQ
DQ
A read burst without the auto precharge function may be interrupted by a BankPrecharge/
Figure 7. Read to Write Interval
Figure 8. Read to Write Interval
Figure 6. Read to Write Interval
T0
NOP
T0
T0
NOP
NOP
READ A
T1
T1
NOP
T1
NOP
T2
NOP
READ A
ACTIVATE
T2
T2
BANKA
T3
NOP
the Write Command
Must be Hi-Z before
T3
T3
Must be Hi-Z before
the Write Command
NOP
NOP
the Write Command
Must be Hi-Z before
DOUT A
T4
NOP
(Burst Length ≧ 4, CAS# Latency = 3)
8
T4
(Burst Length ≥ 4, CAS# Latency = 2)
NOP
(Burst Length ≥ 4, CAS# Latency = 2)
T4
0
NOP
T5
NOP
WRITE B
T5
T5
READ A
DIN B
T6
WRITE B
DIN B
0
T6
T6
NOP
DIN B
WRITE A
DIN A
0
T7
1
NOP
DIN B
0
Don’t Care
T7
NOP
DIN B
T7
1
Don’t Care
DIN A
NOP
T8
DIN B
2
NOP
1
T8
DIN B
NOP
2
DIN A
T8
NOP
AS4C8M16S
3
2
DIN A
T9
NOP
3