AS4C8M16S-7BCN Alliance Memory, AS4C8M16S-7BCN Datasheet - Page 50

• Manufacturer Part Number: AS4C8M16S-7BCN
• Description: DRAM 128Mb, 3.3V, 143Mhz 8M x 16 SDRAM
• Manufacturer: Alliance Memory

Specifications of AS4C8M16S-7BCN

• Rohs: yes
• Data Bus Width: 16 bit
• Organization: 8 M x 16
• Memory Size: 128 MB
• Maximum Clock Frequency: 143 MHz
• Access Time: 5 ns, 5.4 ns
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 3 V
• Maximum Operating Current: 120 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT

Figure 41. Full Page Random Column Write
Figure 42. Precharge Termination of a Burst
A0-A9,
A11
BA0,1
CKE
WE#
DQM
CLK
RAS#
CAS#
CKE
CS#
RAS#
CAS#
WE#
BA0,1
CLK
A10
A0-A9,
A11
DQM
DQ
FEBRUARY 2011
Activate
Cammand
Bank A
High
Hi-Z
RAx
RAx
T0
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Cammand Command
Activate
Bank A
(Burst Length=4, 8 or Full Page, CAS# Latency=3)
RAx
RAx
t
RRD
Write
Command
Bank A
Activate
Bank B
DAx0 DAx1
CAx
RBx
RBx CAx
Precharge Termination
of a Write Burst
Write Data are masked
Write
Command
Bank A
DAx0 DAx1 DBx0 DAy0
t
RCD
t
WR
Write
Command
Bank B
Precharge
Command
Bank A
CBx CAy
t
RP
Write
Command
Bank A
DAy1 DBy0 DBy1 DAz0 DAz1 DAz2 DBz0 DBz1 DBz2
Activate
Command
Bank A
Write
Command Command
Bank B
RAy
RAy
CBy
50
Write
Bank A
CAz
(Burst Length=Full Page)
CAy
Read
Command
Bank A
Write
Command
Bank B
CBz
Precharge
Command
Bank A
Ay0 Ay1
t
RP
Write Data
are masked
t
WR
Ay2
Precharge
Command Bank B
(Precharge Temination)
Activate
Command
Bank A
RAz
RAz
Don’t Care
t
RP
Precharge Termination
of a Read Burst
AS4C8M16S
RBw
Activate
Command
Bank B
RBw