H8S2110B RENESAS [Renesas Technology Corp], H8S2110B Datasheet - Page 537
H8S2110B
Manufacturer Part Number
H8S2110B
Description
Renesas 16-Bit Single-Chip Microcomputer Renesas H8S Family/H8S/2100 Series
Manufacturer
RENESAS [Renesas Technology Corp]
Datasheet
1.H8S2110B.pdf
(559 pages)
- Current page: 537 of 559
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21.1.4
Table 21.11 shows the flash memory characteristics.
Table 21.11 Flash Memory Characteristics
Conditions: V
Item
Programming time *
Erase time *
Reprogramming count
Programming
Flash Memory Characteristics
1
*
3
*
Wait time after
SWE-bit setting *
Wait time after
PSU-bit setting *
Wait time after
P-bit setting *
Wait time after
P-bit clear *
Wait time after
PSU-bit clear *
Wait time after
PV-bit setting *
Wait time after
dummy write *
Wait time after
PV-bit clear *
Wait time after
SWE-bit clear *
Maximum
programming
count *
CC
6
= 3.0 V to 3.6 V, V
1
*
2
1
*
*
4
4
*
5
1
1
1
*
1
1
1
4
1
1
1
Symbol Min
t
t
N
x
y
z1
z2
z3
N
P
E
WEC
SS
= 0 V, T
—
—
—
1
50
28
198
8
5
5
4
2
2
100
—
a
= –20 to +75°C
Typ
10
100
—
—
—
30
200
10
—
—
—
—
—
—
—
Rev. 2.00 Mar 21, 2006 page 499 of 518
Section 21 Electrical Characteristics
Max
200
1200
100
—
—
32
202
12
—
—
—
—
—
—
1000
Unit
ms/
128 bytes
ms/
block
times
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
times
REJ09B0299-0200
Test
Condition
1
7
Additional
write
n
n
6
1000
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