F1206 Polyfet RF Devices, F1206 Datasheet - Page 2

• Manufacturer Part Number: F1206
• Description: PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
• Manufacturer: Polyfet RF Devices

1110 Avenida Acaso, Camarillo, CA 93012 TEL:[phone] FAX:[phone] EMAIL:[e-mail] URL:www.polyfet.com
8
7
6
5
4
3
2
1
0
0
S11 AND S22 SMITH CHART
Vg = 2V
2
4
Vg = 4V
POUT VS PIN GRAPH
6
F1C 1DIE IV CURVE
IV CURVE
Vg = 6V
8
Vds in Volts
10
Vg = 8V
12
14
Vg = 10V
16
18
POLYFET RF DEVICES
Vg = 12V
20
F1206
100
0.1
10
10
1
1
0
0
PACKAGE DIMENSIONS IN INCHES
CAPACITANCE VS VOLTAGE
2
5
4
10
ID AND GM VS VGS
F1C 1DIE GM & ID vs VGS
F1C 1DIE CAPACITANCE
Crss
6
VDS IN VOLTS
Vgs in Volts
15
Coss
8
REVISION 8/1/97
20
Ciss
10
Gm
25
12
Id
30
14