K9K1208D0C Samsung semiconductor, K9K1208D0C Datasheet - Page 8

• Manufacturer Part Number: K9K1208D0C
• Description: 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

AC Timing Characteristics for Command / Address / Data Input
AC Characteristics for Operation
NOTE : 1. If CE goes high within 30ns after the rising edge of the last RE, R/B will not return to V
K9F8008W0M-TCB0, K9F8008W0M-TIB0
CLE Set-up Time
CLE Hold Time
CE Setup Time
CE Hold Time
WE Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
Data Transfer from Cell to Register
ALE to RE Delay
ALE to RE Delay( ID Read )
CE to RE Delay( ID Read )
Ready to RE Low
WE High to Busy
Read Cycle Time
RE Access Time
RE High to Output Hi-Z
CE High to Output Hi-Z
RE High Hold Time
Output Hi-Z to RE Low
Last RE High to Busy(at sequential read)
CE High to Ready(in case of interception by at read)
CE High Hold Time(at the last serial read)
RE Low to Status Output
CE Low to Status Output
WE High to RE Low
Device Resetting Time
2. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
3. To break the sequential read cycle, CE must be held high for longer time than tCEH.
Parameter
(Read/Program/Erase)
Parameter
(3)
(1)
Symbol
t
t
t
t
t
t
t
t
t
t
t
CLS
CLH
ALH
ALS
WP
WC
WH
CS
CH
DS
DH
8
Symbol
t
t
t
t
t
t
t
t
t
RSTO
CSTO
t
t
t
WHR
t
t
t
t
t
REA
RHZ
CHZ
REH
CRY
CEH
RST
AR1
t
WB
t
CR
RR
RC
AR
RB
IR
R
Min
20
40
20
40
40
20
40
30
20
80
20
OL
Min
150
200
200
250
.
20
80
20
50
5
0
-
-
-
-
-
-
-
-
-
FLASH MEMORY
100+tr(R/B)
Max
-
-
-
-
-
-
-
-
-
-
-
5/10/500
Max
200
200
10
45
20
30
45
55
-
-
-
-
-
-
-
-
-
(2)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
s