MF1S5009DA4 NXP [NXP Semiconductors], MF1S5009DA4 Datasheet - Page 5

• Manufacturer Part Number: MF1S5009DA4
• Description: Mainstream contactless smart card IC for fast and easy solution development
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
MF1S5009
Product data sheet
PUBLIC
7.1 Fail die identification
Table 3.
[1]
[2]
Electronic wafer mapping covers the electrical test results and additionally the results of
mechanical/visual inspection.
No ink dots are applied.
gap between chips
Passivation
type
material
thickness
Au bump (substrate connected to VSS)
material
hardness
shear strength
height
height uniformity
flatness
size
size variation
under bump metallization
The gap between chips may vary due to changing foil expansion.
Pads P1, TP2 and VSS are disconnected when wafer is sawn.
Specifications
All information provided in this document is subject to legal disclaimers.
[1]
Rev. 3 — 27 July 2010
189131
Mainstream contactless smart card IC
typical = 15 μm
minimum = 5 μm
sandwich structure
nitride
1.75 μm
>
35 to 80 HV 0.005
>70 MPa
18 μm
within a die = ±2 μm
within a wafer = ±3 μm
wafer to wafer = ±4 μm
minimum = ±1.5 μm
LA, LB = 69 μm × 69 μm
P1;TP2;VSS
±5 μm
sputtered TiW
99.9 % pure Au
[2]
MF1S5009
= 58 μm × 58 μm
© NXP B.V. 2010. All rights reserved.
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