HYB514175BJ-50- SIEMENS [Siemens Semiconductor Group], HYB514175BJ-50- Datasheet - Page 7

• Manufacturer Part Number: HYB514175BJ-50-
• Description: 256k x 16-Bit EDO-DRAM
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

AC Characteristics
T
Parameter
RAS hold time
CAS hold time
CAS to RAS precharge time
Transition time (rise and fall)
Refresh period
Read Cycle
Access time from RAS
Access time from CAS
Access time from column address
OE access time
Column address to RAS lead time
Read command setup time
Read command hold time
Read command hold time ref. to RAS
CAS to output in low-Z
Output buffer turn-off delay from CAS
Output buffer turn-off delay from OE
Data to OE low delay
CAS high to data delay
OE high to data delay
Write Cycle
Write command hold time
Write command pulse width
Write command setup time
Write command to RAS lead time
Write command to CAS lead time
Data setup time
Data hold time
Data to CAS low delay
Semiconductor Group
A
= 0 to 70 C;
V
SS
= 0 V;
(cont’d)5, 6
V
CC
= 5 V
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
10 %,
RSH
CSH
CRP
T
REF
RAC
CAC
AA
OEA
RAL
RCS
RCH
RRH
CLZ
OFF
OEZ
DZO
CDD
ODD
WCH
WP
WCS
RWL
CWL
DS
DH
DZC
t
T
= 2 ns
min. max. min. max. min. max.
13
40
5
1
–
–
–
–
–
25
0
0
0
0
0
0
0
10
10
8
8
0
13
13
0
8
0
7
-50
–
–
–
50
16
50
13
25
13
–
–
–
–
–
13
13
–
–
–
–
–
–
–
–
–
–
–
Limit Values
13
45
5
1
–
–
–
–
–
25
0
0
0
0
0
0
0
10
10
8
8
0
13
13
0
8
0
HYB 514175BJ-50/-55/-60
-55
–
–
–
50
16
55
13
25
13
–
–
–
–
–
13
13
–
–
–
–
–
–
–
–
–
–
–
256k
15
50
5
1
–
–
–
–
–
30
0
0
0
0
0
0
0
13
13
10
10
0
15
15
0
10
0
-60
16 EDO-DRAM
–
–
–
50
16
60
15
30
15
–
–
–
–
–
15
15
–
–
–
–
–
–
–
–
–
–
–
Unit Note
ns
ns
ns
ns
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1998-10-01
7
8, 9
8, 9
8, 10
11
11
8
12
12
13
14
14
15
16
16
13