SUM75N0609LE3 Vishay Semiconductors, SUM75N0609LE3 Datasheet

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SUM75N0609LE3

Manufacturer Part Number
SUM75N0609LE3
Description
TO263
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of SUM75N0609LE3

Date_code
09+
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72037
S-80274-Rev. B, 11-Feb-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
V
(BR)DSS
Ordering Information: SUM75N06-09L-E3 (Lead (Pb)-free)
60
Top View
TO-263
G
(V)
D
S
0.0135 at V
0.0093 at V
DRAIN connected to TAB
r
N-Channel 60-V (D-S), 175 °C MOSFET
DS(on)
J
a
= 175 °C)
GS
GS
(Ω)
= 4.5 V
= 10 V
A
= 25 °C, unless otherwise noted
I
D
90
62
(A)
(PCB Mount)
T
T
T
L = 0.1 mH
T
C
A
C
C
= 100 °C
= 25 °C
= 25 °C
= 25 °C
c
c
FEATURES
• TrenchFET
• 175 °C Junction Temperature
G
N-Channel MOSFET
Symbol
Symbol
T
R
J
R
V
V
E
I
I
P
, T
DM
I
AR
thJC
GS
thJA
DS
AR
D
S
D
D
®
stg
Power MOSFET
- 55 to 175
SUM75N06-09L
Limit
3.75
Limit
± 20
125
160
125
1.2
60
90
53
50
40
b
c
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
mJ
°C
RoHS*
W
COMPLIANT
V
A
Available
1

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