K4S643232E- Samsung semiconductor, K4S643232E- Datasheet - Page 7

• Manufacturer Part Number: K4S643232E-
• Description: 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
• Manufacturer: Samsung semiconductor

K4S643232E-TE/N
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
Notes :
Operating Current
(One Bank Active)
Precharge Standby Current
in power-down mode
Precharge Standby Current
in non power-down mode
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
Parameter
1. Unless otherwise notes, Input level is CMOS(V
2. Measured with outputs open.
3. Refresh period is 64ms.
4. K4S643232E-E**
5. K4S643232E-N**
I
I
I
I
I
I
I
I
I
I
I
I
Symbol
CC1
CC2
CC2
CC2
CC2
CC3
CC3
CC3
CC3
CC4
CC5
CC6
P
PS
N
NS
P
PS
N
NS
Burst Length =1
t
0mA
CKE
CKE
CKE
Input signals are changed one time during 30ns
CKE
Input signals are stable
CKE
CKE
CKE
Input signals are changed one time during 30ns
CKE
Input signals are stable
I
All bank Activated, t
t
CKE
RC
o
RC
= 0 mA, Page Burst
t
t
RC
RC
V
V
V
V
V
V
0.2V
CLK
V
(min), t
(min)
IL
IH
IH
IL
IH
IH
IL
Test Condition
(max), t
(max), t
(min), CS
(min), CLK
(min), CS
(min), CLK
(max), t
V
IL
CC
(max), t
CC
CC
CC
CCD
= 15ns
= 15ns
t
=
CC
V
V
V
V
IH
IH
IH
(min), I
= t
IL
IL
CC
(min), t
(min), t
/V
(max), t
(max), t
CCD
A
=
IL
= -25
=V
(min)
o
CC
CC
=
DDQ
- 7 -
CC
CC
o
= 15ns
= 15ns
C to +85
=
=
Latency
/V
CAS
SSQ
3
2
3
2
3
2
) in LVTTL.
o
C, V
IH(min)
175
150
190
150
190
160
-50
/V
IL(max)
Speed
=2.0V/0.8V)
170
150
180
150
185
160
450
-60
20
10
55
40
3
2
7
5
3
CMOS SDRAM
Rev. 1.4 (Dec. 2001)
-70
155
150
170
150
165
160
Unit Note
mA
mA
mA
mA
mA
mA
mA
mA
uA
2
2
3
4
5