FDMS86150 FAIRCHILD [Fairchild Semiconductor], FDMS86150 Datasheet - Page 3

• Manufacturer Part Number: FDMS86150
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

©2012 Fairchild Semiconductor Corporation
FDMS86150 Rev.C1
Typical Characteristics
300
250
200
150
100
300
250
200
150
100
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
50
50
Figure 3. Normalized On Resistance
0
0
Figure 1.
-75
2
0
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
V
V
DS
GS
GS
I
V
-50
D
vs Junction Temperature
= 5 V
= 10 V
= 8 V
GS
= 16 A
3
= 10 V
V
V
T
1
-25
GS
DS
J
On Region Characteristics
,
JUNCTION TEMPERATURE
, GATE TO SOURCE VOLTAGE (V)
,
DRAIN TO SOURCE VOLTAGE (V)
T
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
J
= 150
4
0
2
o
25
C
μ
s
5
50
T
T
J
J
3
= 25 °C unless otherwise noted
T
= -55
J
75
6
= 25
μ
s
o
(
C
o
100 125 150
o
C
C
)
4
V
V
V
7
GS
GS
GS
= 7 V
= 5 V
= 6 V
8
5
3
0.001
0.01
300
100
0.1
20
15
10
10
4
3
2
1
0
5
0
1
Figure 2.
Figure 4.
0.0
Forward Voltage vs Source Current
0
4
vs Drain Current and Gate Voltage
Figure 6.
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
V
V
= 0 V
GS
0.2
SD
50
5
T
, BODY DIODE FORWARD VOLTAGE (V)
= 5 V
Normalized On-Resistance
V
J
On-Resistance vs Gate to
GS
= 150
I
I
D
Source Voltage
D
Source to Drain Diode
,
,
= 16 A
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
100
0.4
o
6
C
μ
150
0.6
s
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
7
GS
= 6 V
T
V
J
GS
= 25
200
0.8
8
= 8 V
T
J
o
= -55
V
C
T
GS
J
T
J
= 25
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= 7 V
V
250
= 125
1.0
o
GS
9
C
o
= 10 V
C
o
μ
C
s
300
1.2
10