NAND01G-M STMICROELECTRONICS [STMicroelectronics], NAND01G-M Datasheet - Page 16

• Manufacturer Part Number: NAND01G-M
• Description: 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Maximum rating
2
16/23
Maximum rating
Stressing the device above the rating listed in the Absolute Maximum Ratings table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality documents.
Table 5.
1. TBD stands for To Be Defined.
2. Minimum Voltage may undershoot to -2V for less than 20ns during transitions on input and I/O pins.
LPSDRAM Power
LPSDRAM Short
Maximum voltage may overshoot to V
Circuit Output
V
Dissipation
DDD
Symbol
Current
T
V
V
T
, V
BIAS
IO
T
STG
DDF
A
(2)
DDQD
Absolute Maximum Ratings
Ambient Operating Temperature
Temperature Under Bias
Storage Temperature
NAND Flash Input or Output
Voltage
LPSDRAM Input or Output
Voltage
NAND Flash Supply Voltage
LPSDRAM Supply Voltage
I
PD
OS
DD
+ 2V for less than 20ns during transitions on I/O pins.
Parameter
NAND256-M, NAND512-M, NAND01G-M
1.8V device
3V device
1.8V device
1.8V device
3V device
1.8V device
TBD
Min
-0.6
-0.6
-0.5
-0.6
-0.6
-0.5
-30
-55
(1)
Value
1.0
50
TBD
Max
125
2.7
4.6
2.6
2.7
4.6
2.6
85
(1)
Unit
mA
°C
°C
°C
W
V
V
V
V
V
V