CAT24M01_1110 ONSEMI [ON Semiconductor], CAT24M01_1110 Datasheet - Page 3
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CAT24M01_1110
Manufacturer Part Number
CAT24M01_1110
Description
1 Mb I2C CMOS Serial EEPROM
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
1.CAT24M01_1110.pdf
(14 pages)
4. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
5. When not driven, the WP, A
6. Test conditions according to “A.C. Test Conditions” table.
7. Tested initially and after a design or process change that affects this parameter.
8. t
Table 4. PIN IMPEDANCE CHARACTERISTICS
V
Table 5. A.C. CHARACTERISTICS
V
Table 6. A.C. TEST CONDITIONS
Input Levels
Input Rise and Fall Times
Input Reference Levels
Output Reference Levels
Output Load
t
CC
CC
PU
and JEDEC test methods.
strong; therefore the external driver must be able to supply the pull−down current when attempting to drive the input HIGH. To conserve power,
as the input level exceeds the trip point of the CMOS input buffer (~ 0.5 x V
PU
I
t
WP
t
T
R
F
C
C
= 1.8 V to 5.5 V, T
= 1.8 V to 5.5 V, T
Symbol
i
(Notes 7, 8)
t
t
t
t
t
t
t
HD:STA
HD:DAT
SU:DAT
SU:STO
SU:STA
(Note 7)
(Note 7)
is the delay between the time V
IN
IN
(Note 7)
SU:WP
HD:WP
, I
F
t
t
Symbol
t
HIGH
t
LOW
t
BUF
t
WR
SCL
DH
AA
A
(Note 4)
(Note 4)
(Note 5)
Clock Frequency
START Condition Hold Time
Low Period of SCL Clock
High Period of SCL Clock
START Condition Setup Time
Data In Hold Time
Data In Setup Time
SDA and SCL Rise Time
SDA and SCL Fall Time
STOP Condition Setup Time
Bus Free Time Between
STOP and START
SCL Low to Data Out Valid
Data Out Hold Time
Noise Pulse Filtered at SCL
and SDA Inputs
WP Setup Time
WP Hold Time
Write Cycle Time
Power-up to Ready Mode
A
A
= −40°C to +85°C and V
= −40°C to +85°C and V
SDA I/O Pin Capacitance
Input Capacitance (other pins)
WP Input Current, Address Input Current (A
1
Parameter
, A
2
pins are pulled down to GND internally. For improved noise immunity, the internal pull−down is relatively
CC
is stable and the device is ready to accept commands.
(Note 6)
0.2 x V
≤ 50 ns
0.3 x V
0.5 x V
Current Source: I
Parameter
CC
CC
CC
CC
CC
, 0.7 x V
to 0.8 x V
= 2.5 V to 5.5 V, T
= 2.5 V to 5.5 V, T
V
CC
Min
250
4.7
4.7
4.7
2.5
50
http://onsemi.com
L
4
4
0
4
0
CC
= 3 mA (V
= 1.8 V − 5.5 V
Standard
CC
3
1
1,000
Max
, A
100
300
3.5
0.1
CC
A
A
50
5
= −40°C to +125°C, unless otherwise specified.
= −40°C to +125°C, unless otherwise specified.
2
≥ 2.5 V); I
)
CC
), the strong pull−down reverts to a weak current source.
V
V
V
V
V
V
V
CC
Min
100
0.6
1.3
0.6
0.6
0.6
1.3
2.5
50
IN
IN
IN
IN
IN
IN
L
0
0
= 1 mA (V
= 1.8 V − 5.5 V
< V
< V
< V
> V
= 0 V
= 0 V
Fast
IH
IH
IH
IH
Conditions
, V
, V
, V
CC
CC
CC
Max
400
300
300
0.9
0.1
CC
50
5
= 5.5 V
= 3.3 V
= 1.8 V
< 2.5 V); C
T
V
A
CC
0.25
0.45
0.40
0.25
0.25
Min
0.5
50
50
= −405C to +855C
0
0
1
L
Fast−Plus
= 2.5 V − 5.5 V
= 100 pF
1,000
Max
Max
0.40
100
100
75
50
25
0.1
50
8
6
2
5
Units
Units
kHz
ms
ms
ms
ms
ms
ms
ms
ns
ns
ns
ms
ms
ms
ns
ns
ms
ms
mA
pF
pF