CHA7010-99F/00 UMS [United Monolithic Semiconductors], CHA7010-99F/00 Datasheet

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... X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Description The CHA7010 is a monolithic two stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridges. A nitride layer protects the transistors and the passive components ...

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... Vctr Collector current control voltage Tstg Storage temperature range (1) Operation of this device above anyone of these parameters may cause permanent damage. Ref. : DSCHA70102175 -24-June-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Parameter Parameter 2/7 Specifications subject to change without notice ...

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... Output power versus compression level : F= 8.4 to 10.4GHz Ref. : DSCHA70102175 -24-June-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 db(S21) db(S11) db(S22) 9 9,5 10 Frequency(GHz) S-parameters Compression level (dB) 3/7 CHA7010 ...

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... Saturated output power, PAE, Gain and collector current versus frequency Ref. : DSCHA70102175 -24-June-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Pout @ pin = 27 dBm Pae @ pin = 27 dBm gain @ pin = 27 dBm Ic @ pin = 27 dBm 9 9,2 9,4 9,6 Frequency (GHz) ...

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... DC pads (4, 9, 17, 22 pads (6, 11, 15, 20) = 288 x 96 Pin number 18 10, 12, 14, 19, 16 11, 15 Ref. : DSCHA70102175 -24-June-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 ...

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... The RF, DC and modulation port inter-connections should be done according to the following table: Port IN (1) Inductance (Lbonding) = 0.4nH OUT (13) Inductance (Lbonding) = 0.4nH Vc (6, 11, 15, 20)) Vctr (4, 9, 17, 22) Ref. : DSCHA70102175 -24-June-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 ...

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... Ordering Information Chip form : CHA7010-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S ...