CHA5297-99F/00 UMS [United Monolithic Semiconductors], CHA5297-99F/00 Datasheet

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... High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5297 is a three-stage monolithic high power amplifier designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.15µ ...

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... Operating temperature range Tstg Storage temperature range (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA52972149 - 29-May-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 37-40GHz High Power Amplifier Parameter ...

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... Vg1,2,3 DC Gate supply feed Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire prefered. ( Chip thickness : 50µm. All dimensions are in micrometers ) Ref. : DSCHA52972149 - 29-May-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 10nF ...

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... Ordering Information Chip form : CHA5297-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S ...