CHA5093TCF/24 UMS [United Monolithic Semiconductors], CHA5093TCF/24 Datasheet
CHA5093TCF/24
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CHA5093TCF/24 Summary of contents
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High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The packaged monolithic microwave IC (MMIC high gain monolithic high power amplifier designed for a wide range of applications, from military to commercial ...
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CHA5093TCF Schematic CHA5093TCF CHA5093TCF Typical Bias Conditions for an ambient Temperature of +25°C Symbol Pin No. Vd1,2 & 8 Drain bias voltage Vg1,2,3 10 First, second & third stages gate bias voltage Idd 2,4 ...
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High Power Amplifier Typical results on PCB (recommended motherboard layout) Vd=6V, Id adjusted at 600mA 23GHz Footprint Ref. : DSCHA50932035 - ...
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CHA5093TCF Application note The design of the motherboard has a strong impact on the over all performance since the transition from the motherboard to the package is comparably large. In case of the SMD type packages of United Monolithic Semiconductors ...
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High Power Amplifier The RF ports comprise a DC blocking capacitor on chip level. The DC connections include a first level of DC decoupling capacitors (typically 120pF) in the package. However, all DC bias ports should be additionally connected ...
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... United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA50932035 - 04-Feb.-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 24-26GHz High Power Amplifier CHA5093TCF/24 6/6 Specifications subject to change without notice ...