h8s-2111b Renesas Electronics Corporation., h8s-2111b Datasheet - Page 562

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h8s-2111b

Manufacturer Part Number
h8s-2111b
Description
Renesas 16-bit Single-chip Microcomputer H8s Family / H8s/2100 Series
Manufacturer
Renesas Electronics Corporation.
Datasheet
Notes: 1.
Rev. 1.00, 05/04, page 528 of 544
Item
Erase
2. Programming time per 128 bytes (Shows the total period for which the P-bit in FLMCR1
3. Block erase time (Shows the total period for which the E-bit in FLMCR1 is set. It does
4. Maximum programming time (t
5. The maximum number of writes (N) should be set according to the actual set value of
6. Maximum erase time (t
7. The maximum number of erases (N) should be set according to the actual set value of z
t
The wait time after P-bit setting (z1, z2, and z3) should be alternated according to the
1 ≤ n ≤ 6
t
is set. It does not include the programming verification time.)
not include the erase verification time.)
+ wait time after P-bit setting (z2) × ((N) – 6)
z1, z2 and z3 to allow programming within the maximum programming time (t
number of writes (n) as follows:
7 ≤ n ≤ 1000
to allow erasing within the maximum erase time (t
P
E
(max)
(max) = Wait time after E-bit setting (z) × maximum erase count (N)
Wait time after
SWE-bit setting*
Wait time after
ESU-bit setting*
Wait time after
E-bit setting*
Wait time after
E-bit clear*
Wait time after
ESU-bit clear*
Wait time after
EV-bit setting*
Wait time after
dummy write*
Wait time after
EV-bit clear*
Wait time after
SWE-bit clear*
Maximum erase
count*
Set the times according to the program/erase algorithms.
1
, *
6
, *
1
= (wait time after P-bit setting (z1) + (z3)) × 6
z1 = 30µs, z3 = 10µs
z2 = 200µs
7
1
1
, *
1
1
1
1
6
1
1
E
Symbol
x
y
z
α
β
γ
ε
η
θ
N
(max))
P
(max))
Min.
1
100
10
10
10
20
2
4
100
Typ.
E
(max)).
Max.
100
120
Unit
µs
µs
ms
µs
µs
µs
µs
µs
µs
times
Test
Conditions
P
(max)).

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